Semiconductors V. 34, I. 01

Thumbnail Image
Issue Date
MAIK “Nauka/Interperiodica”.
Semiconductors -- January 2000 Volume 34, Issue 1, pp. 1-121 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Holmium Redistribution upon Solid-Phase Epitaxial Crystallization of Amorphized Silicon Layers O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev pp. 1-5 Full Text: PDF (64 kB) Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001) N. V. Vostokov, S. A. Gusev, I. V. Dolgov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, and D. O. Filatov pp. 6-10 Full Text: PDF (194 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Emission Associated with Extended Defects in Epitaxial ZnTe/GaAs Layers and Multilayer Structures E. F. Venger, Yu. G. Sadof'ev, G. N. Semenova, N. E. Korsunskaya, V. P. Klad'ko, M. P. Semtsiv, and L. V. Borkovskaya pp. 11-16 Full Text: PDF (82 kB) Evolution of Photoluminescence Spectra of Stoichiometric CdTe: Dependence on the Purity of Starting Components A. V. Kvit, Yu. V. Klevkov, S. A. Medvedev, V. S. Bagaev, A. V. Perestoronin, and A. F. Plotnikov pp. 17-20 Full Text: PDF (58 kB) Formation of Photoluminescence Centers During Annealing of SiO2 Layers Implanted with Ge Ions G. A. Kachurin, L. Rebohle, I. E. Tyschenko, V. A. Volodin, M. Voelskow, W. Skorupa, and H. Froeb pp. 21-26 Full Text: PDF (90 kB) Special Features of Electrical Activation of 28Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov pp. 27-31 Full Text: PDF (63 kB) Electrophysical Properties of Hg1–xCdxTe Crystals under Hydrostatic Pressure I. V. Virt, V. D. Prozorovskii, and D. I. Tsyutsyura pp. 32-34 Full Text: PDF (49 kB) Band Structure and Spatial Charge Distribution in AlxGa1–xN V. G. Deibuk, A. V. Voznyi, and M. M. Sletov pp. 35-39 Full Text: PDF (178 kB) Field Dependence of the Rate of Thermal Emission of Holes from the VGaSAs Complex in Gallium Arsenide S. V. Bulyarskii, N. S. Grushko, and A. V. Zhukov pp. 40-44 Full Text: PDF (74 kB) Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek pp. 45-55 Full Text: PDF (147 kB) SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES Ellipsometric Study of Ultrathin AlxGa1–xAs Layers M. V. Sukhorukova, I. A. Skorokhodova, and V. P. Khvostikov pp. 56-60 Full Text: PDF (82 kB) Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Bolotov, and V. A. Sachkov pp. 61-66 Full Text: PDF (87 kB) Dynamic Strain-Sensitive Characteristics of the Schottky-Barrier Diodes under a Pulsed Uniform Pressure O. O. Mamatkarimov, S. Z. Zainabidinov, A. Abduraimov, R. Kh. Khamidov, and U. A. Tuichiev pp. 67-69 Full Text: PDF (49 kB) Effect of the Insulator–Gallium Arsenide Boundary on the Behavior of Silicon in the Course of Radiation Annealing V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov pp. 70-72 Full Text: PDF (48 kB) Temperature Dependence of Residual Stress in Epitaxial GaAs/Si(100) Films Determined from Photoreflectance Spectroscopy Data R. V. Kuz'menko, A. V. Ganzha, O. V. Bochurova, É. P. Domashevskaya, J. Schreiber, S. Hildebrandt, S. Mo, E. Peiner, and A. Schlachetzki pp. 73-80 Full Text: PDF (102 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Energy Distribution of Localized States in Amorphous Hydrogenated Silicon K. V. Kougiya, E. I. Terukov, and I. N. Trapeznikova pp. 81-86 Full Text: PDF (79 kB) Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si+ Ions O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, I. N. Petrov, É. P. Domashevskaya, and V. A. Terekhov pp. 87-91 Full Text: PDF (68 kB) The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon E. I. Terukov, V. Kh. Kudoyarova, O. I. Kon'kov, E. A. Konstantinova, B. V. Kamenev, and V. Yu. Timoshenko pp. 92-94 Full Text: PDF (48 kB) Crystal–Glass Phase Transition Induced by Pulses of Electric Field in Chalcogenide Semiconductors É. A. Lebedev, K. D. Tséndin, and L. P. Kazakova pp. 95-97 Full Text: PDF (40 kB) Growth of a-C:H and a-C:H Films Produced by Magnetron Sputtering T. K. Zvonareva, V. I. Ivanov-Omskii, A. V. Nashchekin, and L. V. Sharonova pp. 98-103 Full Text: PDF (330 kB) PHYSICS OF SEMICONDUCTOR DEVICES Light Emitting Diodes for the Spectral Range of lambda = 3.3–4.3µm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 104-107 Full Text: PDF (74 kB) Current Transport in the Me–n–n+ Schottky–Barrier Structures N. A. Torkhov and S. V. Eremeev pp. 108-114 Full Text: PDF (100 kB) Capacitance Measurements for Diodes in the Case of Strong Dependence of the Diode-Base Series Resistance on the Applied Voltage A. A. Lebedev, Jr, A. A. Lebedev[dagger], and D. V. Davydov pp. 115-118 Full Text: PDF (66 kB) A Spatially Single-Mode Laser for a Range of 1.25–1.28µm on the Basis of InAs Quantum Dots on a GaAs Substrate S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov pp. 119-121 Full Text: PDF (55 kB)