Semiconductors V. 36, I. 05

dc.date.accessioned2007-06-12T18:44:21Z
dc.date.available2007-06-12T18:44:21Z
dc.date.issued2002-05
dc.descriptionSemiconductors -- May 2002 Volume 36, Issue 5, pp. 481-604 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Nonlinear Photoluminescence of Graded-Gap AlxGa1 – xAs Solid Solutions V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov pp. 481-486 Full Text: PDF (102 kB) Features of Determination of Shallow-Level Impurity Concentrations in Semiconductors from Analysis of the Exciton Luminescence Spectrum K. D. Glinchuk and A. V. Prokhorovich pp. 487-492 Full Text: PDF (91 kB) Deep Level Spectra of MBE-Grown ZnTe:Cr2+ Layers Yu. G. Sadofyev and M. V. Korshkov pp. 493-495 Full Text: PDF (42 kB) Band Structure of Mg2Si and Mg2Ge Semiconducting Compounds with a Strained Crystal Lattice A. V. Krivosheeva, A. N. Kholod, V. L. Shaposhnikov, A. E. Krivosheev, and V. E. Borisenko pp. 496-500 Full Text: PDF (81 kB) Localized States in Hg3In2Te6: Cr Compounds P. N. Gorlei, O. G. Grushka, and V. M. Frasunyak pp. 501-504 Full Text: PDF (65 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Control of Charge Transport Mode in the Schottky Barrier by delta-Doping: Calculation and Experiment for Al/GaAs V. I. Shashkin, A. V. Murel, V. M. Daniltsev, and O. I. Khrykin pp. 505-510 Full Text: PDF (92 kB) LOW-DIMENSIONAL SYSTEMS Electrons, Holes, and Excitons in a Superlattice Composed of Cylindrical Quantum Dots with Extremely Weak Coupling between Quasiparticles in Neighboring Layers of Quantum Dots N. V. Tkach, A. M. Makhanets, and G. G. Zegrya pp. 511-518 Full Text: PDF (105 kB) Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge1 – xSix Heterostructures in the Quantum Hall Effect Mode Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, and M. V. Yakunin pp. 519-526 Full Text: PDF (126 kB) Miniband Spectra of (AlAs)M(GaAs)N(111) Superlattices G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov pp. 527-534 Full Text: PDF (94 kB) Room Temperature lambda = 1.3 µm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate T. M. Burbaev, I. P. Kazakov, V. A. Kurbatov, M. M. Rzaev, V. A. Tsvetkov, and V. I. Tsekhosh pp. 535-538 Full Text: PDF (172 kB) Resonance Tunneling and Nonlinear Current in Heterobarriers with Complex Law of Carrier Dispersion C. S. Kim, A. M. Satanin, and V. B. Shtenberg pp. 539-545 Full Text: PDF (94 kB) Multichannel Carrier Scattering at Quantum-Well Heterostructures V. I. Galiev, A. N. Kruglov, A. F. Polupanov, E. M. Goldys, and T. L. Tansley pp. 546-551 Full Text: PDF (83 kB) Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and B. N. Zvonkov pp. 552-557 Full Text: PDF (72 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin, T. V. Torchynska, L. Yu. Khomenkova, and V. O. Yukhymchuk pp. 558-563 Full Text: PDF (259 kB) Formation of Macropore Nucleation Centers in Silicon by Ion Implantation E. V. Astrova and T. N. Vasunkina pp. 564-567 Full Text: PDF (402 kB) X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova, V. I. Obodnikov, A. K. Gutakovskii, and V. P. Popov pp. 568-573 Full Text: PDF (136 kB) Preparation and Study of Carbidized Porous Silicon O. M. Sreseli, D. N. Goryachev, V. Yu. Osipov, L. V. Belyakov, S. P. Vul', I. T. Serenkov, V. I. Sakharov, and A. Ya. Vul' pp. 574-580 Full Text: PDF (122 kB) PHYSICS OF SEMICONDUCTOR DEVICES Shallow p–n Junctions Formed in Silicon Using Pulsed Photon Annealing S. T. Sisianu, T. S. Sisianu, and S. K. Railean pp. 581-587 Full Text: PDF (86 kB) Simulation of Avalanche Multiplication of Electrons in Photodetectors with Blocked Hopping Conduction S. P. Sinitsa pp. 588-591 Full Text: PDF (60 kB) Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Tsivish, and Yu. P. Yakovlev pp. 592-598 Full Text: PDF (84 kB) Generation of Microwave Oscillations in a No-Base Diode S. A. Darznek, S. K. Lyubutin, S. N. Rukin, and B. G. Slovikovskii pp. 599-604 Full Text: PDF (111 kB)en
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dc.format.extent7062 bytes
dc.format.mimetypeapplication/pdf
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dc.identifier.urihttp://hdl.handle.net/1951/41438
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 36en
dc.relation.ispartofseriesI. 05en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 36, I. 05en
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