Semiconductors V. 36, I. 05
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Authors
Issue Date
2002-05
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- May 2002
Volume 36, Issue 5, pp. 481-604
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Nonlinear Photoluminescence of Graded-Gap AlxGa1 – xAs Solid Solutions
V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov
pp. 481-486 Full Text: PDF (102 kB)
Features of Determination of Shallow-Level Impurity Concentrations in Semiconductors from Analysis of the Exciton Luminescence Spectrum
K. D. Glinchuk and A. V. Prokhorovich
pp. 487-492 Full Text: PDF (91 kB)
Deep Level Spectra of MBE-Grown ZnTe:Cr2+ Layers
Yu. G. Sadofyev and M. V. Korshkov
pp. 493-495 Full Text: PDF (42 kB)
Band Structure of Mg2Si and Mg2Ge Semiconducting Compounds with a Strained Crystal Lattice
A. V. Krivosheeva, A. N. Kholod, V. L. Shaposhnikov, A. E. Krivosheev, and V. E. Borisenko
pp. 496-500 Full Text: PDF (81 kB)
Localized States in Hg3In2Te6: Cr Compounds
P. N. Gorlei, O. G. Grushka, and V. M. Frasunyak
pp. 501-504 Full Text: PDF (65 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Control of Charge Transport Mode in the Schottky Barrier by delta-Doping: Calculation and Experiment for Al/GaAs
V. I. Shashkin, A. V. Murel, V. M. Daniltsev, and O. I. Khrykin
pp. 505-510 Full Text: PDF (92 kB)
LOW-DIMENSIONAL SYSTEMS
Electrons, Holes, and Excitons in a Superlattice Composed of Cylindrical Quantum Dots with Extremely Weak Coupling between Quasiparticles in Neighboring Layers of Quantum Dots
N. V. Tkach, A. M. Makhanets, and G. G. Zegrya
pp. 511-518 Full Text: PDF (105 kB)
Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge1 – xSix Heterostructures in the Quantum Hall Effect Mode
Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, and M. V. Yakunin
pp. 519-526 Full Text: PDF (126 kB)
Miniband Spectra of (AlAs)M(GaAs)N(111) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 527-534 Full Text: PDF (94 kB)
Room Temperature lambda = 1.3 µm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate
T. M. Burbaev, I. P. Kazakov, V. A. Kurbatov, M. M. Rzaev, V. A. Tsvetkov, and V. I. Tsekhosh
pp. 535-538 Full Text: PDF (172 kB)
Resonance Tunneling and Nonlinear Current in Heterobarriers with Complex Law of Carrier Dispersion
C. S. Kim, A. M. Satanin, and V. B. Shtenberg
pp. 539-545 Full Text: PDF (94 kB)
Multichannel Carrier Scattering at Quantum-Well Heterostructures
V. I. Galiev, A. N. Kruglov, A. F. Polupanov, E. M. Goldys, and T. L. Tansley
pp. 546-551 Full Text: PDF (83 kB)
Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells
I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and B. N. Zvonkov
pp. 552-557 Full Text: PDF (72 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra
B. M. Bulakh, B. R. Jumayev, N. O. Korsunska, O. S. Litvin, T. V. Torchynska, L. Yu. Khomenkova, and V. O. Yukhymchuk
pp. 558-563 Full Text: PDF (259 kB)
Formation of Macropore Nucleation Centers in Silicon by Ion Implantation
E. V. Astrova and T. N. Vasunkina
pp. 564-567 Full Text: PDF (402 kB)
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation
V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova, V. I. Obodnikov, A. K. Gutakovskii, and V. P. Popov
pp. 568-573 Full Text: PDF (136 kB)
Preparation and Study of Carbidized Porous Silicon
O. M. Sreseli, D. N. Goryachev, V. Yu. Osipov, L. V. Belyakov, S. P. Vul', I. T. Serenkov, V. I. Sakharov, and A. Ya. Vul'
pp. 574-580 Full Text: PDF (122 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Shallow p–n Junctions Formed in Silicon Using Pulsed Photon Annealing
S. T. Sisianu, T. S. Sisianu, and S. K. Railean
pp. 581-587 Full Text: PDF (86 kB)
Simulation of Avalanche Multiplication of Electrons in Photodetectors with Blocked Hopping Conduction
S. P. Sinitsa
pp. 588-591 Full Text: PDF (60 kB)
Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Tsivish, and Yu. P. Yakovlev
pp. 592-598 Full Text: PDF (84 kB)
Generation of Microwave Oscillations in a No-Base Diode
S. A. Darznek, S. K. Lyubutin, S. N. Rukin, and B. G. Slovikovskii
pp. 599-604 Full Text: PDF (111 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.