Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors
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Authors
Hu, Zhaoying
Tulevski, George S.
Hannon, James B.
Afzali, Ali
Liehr, Michael
Park, Hongsik
Issue Date
2015
Type
Article
Language
en_US
Keywords
carbon nanotubes , channel material , scaled transistor , high-speed logic application , low-power logic application , drive current , logic device , field-effect transistor , self-assembly , compact statistical model , Monte Carlo simulation
Alternative Title
Applied Physics Letters
Abstract
Carbon nanotubes (CNTs) have been widely studied as a channel material of scaled transistors for high-speed and low-power logic applications. In order to have sufficient drive current, it is widely assumed that CNT-based logic devices will have multiple CNTs in each channel. Understanding the effects of the number of CNTs on device performance can aid in the design of CNT field-effect transistors (CNTFETs). We have fabricated multi-CNT-channel CNTFETs with an 80-nm channel length using precise self-assembly methods. We describe compact statistical models and Monte Carlo simulations to analyze failure probability and the variability of the on-state current and threshold voltage. The results show that multichannel CNTFETs are more resilient to process variation and random environmental fluctuations than single-CNT devices.
Description
Citation
Hu, Z., Tulevski, G. S., Hannon, J. B., Afzali, A., Liehr, M., & Park, H. (2015). Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors. Applied Physics Letters, 106, 243106. doi:10.1063/1.4922770
Publisher
Applied Physics Letters
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
0003-6951