Semiconductors V. 38, I. 09
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Authors
Issue Date
2004-09
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- September 2004
Volume 38, Issue 9, pp. 987-1114
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Certain Features of Ga Diffusion in ZnS Powders
Yu. Yu. Bacherikov, I. P. Vorona, S. V. Optasyuk, V. E. Rodionov, and A. A. Stadnik
pp. 987-991 Full Text: PDF (63 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Impact-Ionization Autosolitons in Compensated Silicon
A. M. Musaev
pp. 992-995 Full Text: PDF (50 kB)
Effect of Vacuum Annealing on the Edge Luminescence of Undoped Zinc Selenide
V. P. Makhnii, A. M. Sletov, and I. V. Tkachenko
pp. 996-997 Full Text: PDF (39 kB)
Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure
N. M. Shmidt, M. E. Levinshtein, W. V. Lundin, A. I. Besyul'kin, P. S. Kop'ev, S. L. Rumyantsev, N. Pala, and M. S. Shur
pp. 998-1000 Full Text: PDF (49 kB)
Elementary Blue-Emission Bands in the Luminescence Spectrum of Undoped Gallium Nitride Films
A. N. Gruzintsev, A. N. Red'kin, V. I. Tatsii, C. Barthou, and P. Benalloul
pp. 1001-1004 Full Text: PDF (55 kB)
Determination of the Minority-Carrier Lifetime in Silicon Ingots by Photoconductivity Relaxation Measured at Microwave Frequencies
P. A. Borodovskii, A. F. Buldygin, and A. S. Tokarev
pp. 1005-1011 Full Text: PDF (101 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Interfaces and Roughness in a Multilayer Silicon Structure
A. I. Belyaeva, A. A. Galuza, and S. N. Kolomiets
pp. 1012-1017 Full Text: PDF (246 kB)
Photosensitive Structures Based on Single-Crystal Silicon and Phthalocyanine CuPc: Fabrication and Properties
G. A. Il'chuk, N. V. Klimova, O. I. Kon'kov, S. E. Nikitin, Yu. A. Nikolaev, L. I. Rudaya, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, V. V. Shamanin, and T. A. Yurre
pp. 1018-1022 Full Text: PDF (80 kB)
Interaction of C60 Molecules with the (100)W Surface: Adsorption, Initial Stages of Film Growth, and Thermal Transformation of the Adsorption Layer
N. R. Gall', E. V. Rut'kov, and A. Ya. Tontegode
pp. 1023-1029 Full Text: PDF (96 kB)
Radiative Recombination in a Silicon MOS Tunnel Structure
N. Asli, M. I. Vexler, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, and A. F. Shulekin
pp. 1030-1035 Full Text: PDF (97 kB)
Potential Barrier Formation at a Metal–Semiconductor Contact Using Selective Removal of Atoms
B. A. Gurovich, B. A. Aronzon, V. V. Ryl'kov, E. D. Ol'shanskii, E. A. Kuleshova, D. I. Dolgii, D. Yu. Kovalev, and V. I. Filippov
pp. 1036-1040 Full Text: PDF (102 kB)
Special Features of Radiation-Defect Annealing in Silicon p–n Structures: The Role of Fe Impurity Atoms
B. A. Komarov
pp. 1041-1046 Full Text: PDF (80 kB)
LOW-DIMENSIONAL SYSTEMS
Electrical Properties of Metal–Semiconductor Nanocontacts
N. V. Vostokov and V. I. Shashkin
pp. 1047-1052 Full Text: PDF (71 kB)
Effect of Electron–Electron and Electron–Hole Collisions on Intraband Population Inversion of Electrons in Stepped Quantum Wells
V. L. Zerova, G. G. Zegrya, and L. E. Vorob'ev
pp. 1053-1060 Full Text: PDF (107 kB)
Calculation of Current–Voltage Characteristics of Gallium Arsenide Symmetric Double-Barrier Resonance Tunneling Structures with Allowance for the Destruction of Electron-Wave Coherence in Quantum Wells
D. V. Pozdnyakov, V. M. Borzdov, and F. F. Komarov
pp. 1061-1064 Full Text: PDF (54 kB)
Relaxation of Charge Carriers in Quantum Dots with the Involvement of Plasmon–Phonon Modes
A. V. Fedorov and A. V. Baranov
pp. 1065-1073 Full Text: PDF (112 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Influence of Supramolecular Ordering on Photophysical Properties of Polyamidines
E. L. Aleksandrova, M. E. Kompan, M. M. Dudkina, A. V. Tenkovtsev, and E. I. Terukov
pp. 1074-1077 Full Text: PDF (61 kB)
Current Instability with an S-Shaped I–V Characteristic in Films of a Metal–Polymer Complex of Polyamide Acid with Tb+2
É. A. Lebedev, M. Ya. Goikhman, K. D. Tséndin, I. V. Podeshvo, E. I. Terukov, and V. V. Kudryavtsev
pp. 1078-1080 Full Text: PDF (41 kB)
Carrier Drift Mobility in Porous Silicon Carbide
L. P. Kazakova, M. G. Mynbaeva, and K. D. Mynbaev
pp. 1081-1083 Full Text: PDF (39 kB)
Quartz Microtubes Based on Macroporous Silicon
E. V. Astrova, T. N. Borovinskaya, T. S. Perova, and M. V. Zamoryanskaya
pp. 1084-1087 Full Text: PDF (348 kB)
Technique for Patterning Macroporous Silicon and the Fabrication of Bars of 2D Photonic Crystals with Vertical Walls
E. V. Astrova, T. N. Borovinskaya, V. A. Tolmachev, and T. S. Perova
pp. 1088-1091 Full Text: PDF (376 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
A Study of Deep Levels in CdHgTe by Analyzing the Tunneling Current of Photodiodes
V. I. Turinov
pp. 1092-1098 Full Text: PDF (106 kB)
Lasing in Cd(Zn)Se/ZnMgSSe Heterostructures Pumped by Nitrogen and InGaN/GaN Lasers
I. V. Sedova, S. V. Sorokin, A. A. Toropov, V. A. Kaigorodov, S. V. Ivanov, P. S. Kop'ev, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubelevich, A. L. Gurskii, G. P. Yablonskii, Y. Dikme, H. Kalisch, A. Szymakowski, R. H. Jansen, B. Schineller, and M. Heuken
pp. 1099-1104 Full Text: PDF (90 kB)
Characteristics of Planar Diodes Based on Heavily Doped GaAs/AlAs Superlattices in the Terahertz Frequency Region
D. G. Pavel'ev, N. V. Demarina, Yu. I. Koshurinov, A. P. Vasil'ev, E. S. Semenova, A. E. Zhukov, and V. M. Ustinov
pp. 1105-1110 Full Text: PDF (89 kB)
Behavior of Graded-Gap Detectors of Ionizing Radiation under Irradiation with Alpha Particles
L. Dapkus, K. Pozela, J. Pozela, A. Silenas, V. Juciene, and V. Jasutis
pp. 1111-1114 Full Text: PDF (59 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.