Semiconductors V. 36, I. 08

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2002-08
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Semiconductors
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Semiconductors -- August 2002 Volume 36, Issue 8, pp. 837-951 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 837-840 Full Text: PDF (60 kB) Threshold of Inelastic Strain Formation in Si and GaAs Surface Layers under Multiple Pulsed Laser Irradiation S. V. Vintsents, A. V. Zoteev, and G. S. Plotnikov pp. 841-844 Full Text: PDF (58 kB) Dissociation Energies of a CiCs Complex and the A Center in Silicon N. I. Boyarkina, S. A. Smagulova, and A. A. Artem'ev pp. 845-847 Full Text: PDF (46 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES Initial Stages of Growth of Diamond Island Films on Crystalline Silicon N. A. Feoktistov, V. V. Afanas'ev, V. G. Golubev, S. A. Grudinkin, S. A. Kukushkin, and V. G. Melekhin pp. 848-851 Full Text: PDF (141 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Local Structure of Zinc Impurity Centers in Lead Chalcogenides and Pb1 – xSnxTe Solid Solutions S. A. Nemov and N. P. Seregin pp. 852-854 Full Text: PDF (100 kB) Influence of Tellurium Impurity on the Properties of Ga1 – XInXAsYSb1 – Y (X > 0.22) Solid Solutions T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, and Yu. P. Yakovlev pp. 855-862 Full Text: PDF (104 kB) Optical Properties of Bulk and Epitaxial Unordered GaxIn1 – xP Semiconductor Alloys Ya. I. Vyklyuk, V. G. Deibuk, and S. V. Zolotarev pp. 863-868 Full Text: PDF (89 kB) Electrical and Thermoelectric Properties of p-Ag2Te F. F. Aliev, E. M. Kerimova, and S. A. Aliev pp. 869-873 Full Text: PDF (74 kB) Photoconductivity of Coarse-Grained CdTe Polycrystals S. A. Medvedev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, and A. F. Plotnikov pp. 874-877 Full Text: PDF (51 kB) Time-Resolved Photoluminescence of Polycrystalline GaN Layers on Metal Substrates A. V. Andrianov, K. Yamada, H. Tampo, H. Asahi, V. Yu. Nekrasov, Z. N. Petrovskaya, O. M. Sreseli, and N. N. Zinov'ev pp. 878-882 Full Text: PDF (66 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Low-Threshold Defect Formation and Modification of Ge Surface Layer under Elastic and Elastoplastic Pulsed Laser Effects S. V. Vintsents, V. B. Zaitsev, A. V. Zoteev, G. S. Plotnikov, A. I. Rodionov, and A. V. Chervyakov pp. 883-888 Full Text: PDF (79 kB) Electron Tunneling through a Double Barrier in a Reverse-Biased Metal–Oxide–Silicon Structure G. G. Kareva, M. I. Vexler, I. V. Grekhov, and A. F. Shulekin pp. 889-894 Full Text: PDF (89 kB) LOW-DIMENSIONAL SYSTEMS Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis G. A. Lyubas, N. N. Ledentsov, D. Litvinov, B. R. Semyagin, I. P. Soshnikov, V. M. Ustinov, V. V. Bolotov, and D. Gerthsen pp. 895-898 Full Text: PDF (138 kB) Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J.-S. Wang, and J. Y. Chi pp. 899-902 Full Text: PDF (66 kB) Two-Dimensional p–n Junction under Equilibrium Conditions A. Sh. Achoyan, A. É. Yesayan, É. M. Kazaryan, and S. G. Petrosyan pp. 903-907 Full Text: PDF (70 kB) Calculations of the Charge-Carrier Mobility and the Thermoelectric Figure of Merit for Multiple-Quantum-Well Structures D. A. Pshenai-Severin and Yu. I. Ravich pp. 908-915 Full Text: PDF (91 kB) Nonlinear Response and Nonlinear Coherent Generation in Resonant-Tunneling Diode in a Broad Frequency Range V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev pp. 916-920 Full Text: PDF (61 kB) Anomalies of the Fractional Quantum Hall Effect in a Wide Ballistic Wire Z. D. Kvon, E. B. Olshanetsky, A. E. Plotnikov, A. I. Toropov, and J. C. Portal pp. 921-923 Full Text: PDF (46 kB) Special Features of Electrical Conductivity in a Parabolic Quantum Well in a Magnetic Field E. P. Sinyavskii and R. A. Khamidullin pp. 924-928 Full Text: PDF (59 kB) Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures Yu. L. Ivanov, N. V. Agrinskaya, P. V. Petrov, V. M. Ustinov, and G. É. Tsyrlin pp. 929-931 Full Text: PDF (43 kB) One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon V. A. Tolmachev, L. S. Granitsyna, E. N. Vlasova, B. Z. Volchek, A. V. Nashchekin, A. D. Remenyuk, and E. V. Astrova pp. 932-935 Full Text: PDF (263 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Gamma-Irradiation-Induced Metastable States of Undoped Amorphous Hydrogenated Silicon M. S. Ablova, G. S. Kulikov, and S. K. Persheev pp. 936-940 Full Text: PDF (73 kB) Fabrication and Properties of Amorphous Hydrogenated Boron Carbide Films A. S. Anan'ev, O. I. Kon'kov, V. M. Lebedev, A. N. Novokhatski, E. I. Terukov, and I. N. Trapeznikova pp. 941-943 Full Text: PDF (47 kB) PHYSICS OF SEMICONDUCTOR DEVICES Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov, and E. A. Kognovitskaya pp. 944-949 Full Text: PDF (71 kB) PERSONALIA Viktor Il'ich Fistul' (on his 75th birthday) pp. 950-951 Full Text: PDF (71 kB)
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