Semiconductors V. 35, I. 03

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MAIK “Nauka/Interperiodica”.
Semiconductors -- March 2001 Volume 35, Issue 3, pp. 243-369 REVIEWS Electrical and Optical Properties of Pristine and Polymerized Fullerenes T. L. Makarova pp. 243-278 Full Text: PDF (791 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Heteroepitaxy of II–VI Compound Semiconductors on Cooled Substrates A. P. Belyaev and V. P. Rubets pp. 279-282 Full Text: PDF (107 kB) Molecular-Dynamics Simulation of Structural Properties of Ge1 – xSnx Substitutional Solid Solutions V. G. Deibuk and Yu. G. Korolyuk pp. 283-286 Full Text: PDF (60 kB) Low-Temperature Diffusion of Indium into Germanium Assisted by Atomic Hydrogen V. M. Matyushin pp. 287-290 Full Text: PDF (51 kB) A New Magnetic Semiconductor Cd1 – xMnxGeP2 G. A. Medvedkin, T. Ishibashi, T. Nishi, and K. Sato pp. 291-294 Full Text: PDF (133 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Temperature Dependence of a Magnetoresistance Effect in the Films of Ferromagnetic Semiconductors Based on Oxides of Rare-Earth Elements V. F. Kabanov, S. A. Karasev, and Ya. G. Fedorenko pp. 295-297 Full Text: PDF (44 kB) Specific Features of the Nonequilibrium Distribution Function for Electron Scattering by Polar Optical Phonons in III–V Semiconductors S. I. Borisenko pp. 298-301 Full Text: PDF (60 kB) On the Stabilization of Electrical Properties of Compensated Silicon as a Result of Irradiation with 60Co Gamma-Ray Quanta M. S. Yunusov, M. Karimov, and M. A. Dzhalelov pp. 302-305 Full Text: PDF (54 kB) Generation–Recombination Processes in Semiconductors I. N. Volovichev and Yu. G. Gurevich pp. 306-315 Full Text: PDF (99 kB) Capacitance–Voltage Characteristics of p–n Structures Based on (111)Si Doped with Erbium and Oxygen A. M. Emel'yanov, N. A. Sobolev, and A. N. Yakimenko pp. 316-320 Full Text: PDF (75 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Negative Luminescence in p-InAsSbP/n-InAs Diodes M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 321-324 Full Text: PDF (78 kB) Characterization of Electroluminescent Structures Based on Gallium Arsenide Ion-Implanted with Ytterbium and Oxygen D. W. Palmer, V. A. Dravin, V. M. Konnov, E. A. Bobrova, N. N. Loiko, S. G. Chernook, and A. A. Gippius pp. 325-330 Full Text: PDF (73 kB) Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties T. I. Voronina, B. E. Zhurtanov, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev pp. 331-337 Full Text: PDF (102 kB) Extension of the Frequency Range of the Noise Spectral Density in Silicon p–n Structures Irradiated with Gamma-Ray Quanta O. K. Baranovskii, P. V. Kuchinskii, V. M. Lutkovskii, A. P. Petrunin, and E. D. Savenok pp. 338-342 Full Text: PDF (75 kB) LOW-DIMENSIONAL SYSTEMS Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing L. V. Asryan and R. A. Suris pp. 343-346 Full Text: PDF (61 kB) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs I. P. Soshnikov, O. M. Gorbenko, A. O. Golubok, and N. N. Ledentsov pp. 347-352 Full Text: PDF (615 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing I. A. Kurova, N. N. Ormont, E. I. Terukov, I. N. Trapeznikova, V. P. Afanas'ev, and A. S. Gudovskikh pp. 353-356 Full Text: PDF (68 kB) PHYSICS OF SEMICONDUCTOR DEVICES Optically Pumped Mid-Infrared InGaAs(Sb) LEDs N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, and V. V. Shustov pp. 357-359 Full Text: PDF (56 kB) Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 µm A. N. Imenkov, N. M. Kolchanova, P. Kubat, K. D. Moiseev, C. Civis, and Yu. P. Yakovlev pp. 360-364 Full Text: PDF (63 kB) Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers D. A. Livshits, A. Yu. Egorov, I. V. Kochnev[dagger], V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot, and I. S. Tarasov pp. 365-369 Full Text: PDF (66 kB)