Semiconductors V. 36, I. 11

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MAIK “Nauka/Interperiodica”.
Semiconductors -- November 2002 Volume 36, Issue 11, pp. 1199-1321 DEDICATED TO THE MEMORY OF V. F. MASTEROV Vadim Fedorovich Masterov, a Scientist and a Teacher V. K. Ivanov and B. P. Popov pp. 1199-1201 Full Text: PDF (58 kB) International Symposium on Photoluminescence and Electroluminescence of Rare-Earth Elements in Semiconductors and Insulators E. I. Terukov pp. 1202-1203 Full Text: PDF (19 kB) V. F. Masterov's School and Fullerene Research at the Department of Experimental Physics, St. Petersburg State Technical University A. V. Prikhodko and O. I. Konkov pp. 1204-1208 Full Text: PDF (84 kB) A Model for the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions O. V. Aleksandrov and A. O. Zakhar'in pp. 1209-1214 Full Text: PDF (70 kB) Emission from Rare-Earth Centers in (ZnTe:Yb):O/GaAs V. M. Konnov, N. N. Loiko, Yu. G. Sadof'ev, A. S. Trushin, and E. I. Makhov pp. 1215-1220 Full Text: PDF (75 kB) Temperature Dependences of Photoluminescence Spectra of Single-Crystal Ca2GeO4:Cr4+ Films O. N. Gorshkov, E. S. Demidov, E. M. Dianov, A. P. Kasatkin, V. F. Lebedev, G. A. Maksimov, S. A. Tyurin, A. B. Chigineva, Yu. I. Chigirinskii, and A. N. Shushunov pp. 1221-1224 Full Text: PDF (60 kB) Effect of Surface State Density on Room Temperature Photoluminescence from Si–SiO2 Structures in the Range of Band-to-Band Recombination in Silicon A. M. Emel'yanov, N. A. Sobolev, and S. Pizzini pp. 1225-1226 Full Text: PDF (34 kB) Buried Nanoscale Damaged Layers Formed in Si and SiC Crystals as a Result of High-Dose Proton Implantation V. A. Kozlov, V. V. Kozlovskii, A. N. Titkov, M. S. Dunaevskii, and A. K. Kryzhanovskii pp. 1227-1234 Full Text: PDF (502 kB) The Formation of beta-FeSi2 Precipitates in Microcrystalline Si E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, V. Yu. Davydov, and G. N. Mosina pp. 1235-1239 Full Text: PDF (164 kB) Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures E. I. Terukov, O. B. Gusev, O. I. Kon'kov, Yu. K. Undalov, M. Stutzmann, A. Janotta, H. Mell, and J. P. Kleider pp. 1240-1243 Full Text: PDF (50 kB) Photoluminescence and Excitation Features of Nd3+ Ions in (La0.97Nd0.03)2S3 · 2Ga2O3 Glasses A. A. Babaev, E. M. Zobov, V. V. Sokolov, and A. Kh. Sharapudinova pp. 1244-1247 Full Text: PDF (59 kB) Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films O. I. Kon'kov, E. I. Terukov, and L. S. Granitsina pp. 1248-1251 Full Text: PDF (131 kB) Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films M. M. Mezdrogina, I. N. Trapeznikova, E. I. Terukov, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin pp. 1252-1259 Full Text: PDF (227 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS The Influence of Sinks of Intrinsic Point Defects on Phosphorus Diffusion in Si O. V. Aleksandrov pp. 1260-1266 Full Text: PDF (87 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Possibility of Observing Bose–Einstein Condensation in Semiconductors via Mössbauer Spectroscopy using the 67Zn Isotope S. A. Nemov, N. P. Seregin, and S. M. Irkaev pp. 1267-1269 Full Text: PDF (49 kB) Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide) A. A. Lebedev, V. V. Kozlovski, N. B. Strokan, D. V. Davydov, A. M. Ivanov, A. M. Strel'chuk, and R. Yakimova pp. 1270-1275 Full Text: PDF (64 kB) Kinetic Theory of Negative Magnetoresistance as an Alternative to Weak Localization in Semiconductors V. É. Kaminskii pp. 1276-1282 Full Text: PDF (85 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES The Influence of Adsorbate on the Work Function and Penetrability of the Surface Potential Barrier of GaAs(110) Single Crystal Yu. I. Asalkhanov and V. N. Abarykov pp. 1283-1287 Full Text: PDF (62 kB) LOW-DIMENSIONAL SYSTEMS ZnMnSe/ZnSSe Type-II Semimagnetic Superlattices: Growth and Magnetoluminescence Properties A. A. Toropov, A.V. Lebedev, S. V. Sorokin, D. D. Solnyshkov, S. V. Ivanov, P. S. Kop'ev, I. A. Buyanova, W. M. Chen, and B. Monemar pp. 1288-1293 Full Text: PDF (79 kB) Ordering of Nanostructures in a Si/Ge0.3Si0.7/Ge System during Molecular Beam Epitaxy G. E. Cirlin, V. A. Egorov, L. V. Sokolov, and P. Werner pp. 1294-1298 Full Text: PDF (405 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Effect of Fullerene on the Photogeneration and Transport of Charge Carriers in Triphenylamine-Containing Polyimides E. L. Aleksandrova pp. 1299-1302 Full Text: PDF (56 kB) PHYSICS OF SEMICONDUCTOR DEVICES Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev pp. 1303-1307 Full Text: PDF (59 kB) High Power Single-Mode (lambda = 1.3–1.6 µm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov pp. 1308-1314 Full Text: PDF (91 kB) High Efficiency (etaD > 80%) Long Wavelength (lambda > 1.25 µm) Quantum Dot Diode Lasers on GaAs Substrates S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil'ev, E. S. Semenova, V. M. Ustinov, M. M. Kulagina, E. V. Nikitina, I. P. Soshnikov, Yu. M. Shernyakov, D. A. Livshits, N. V. Kryjanovskaya, D. S. Sizov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, D. Bimberg, and Zh. I. Alferov pp. 1315-1321 Full Text: PDF (94 kB)