Semiconductors V. 35, I. 10
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Authors
Issue Date
2001-10
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- October 2001
Volume 35, Issue 10, pp. 1117-1221
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Some Aspects of SiC CVD Epitaxy
V. V. Zelenin, M. L. Korogodskii, and A. A. Lebedev
pp. 1117-1119 Full Text: PDF (37 kB)
The Effect of CVD Growth Conditions of 6H-SiC Epilayers on Al Incorporation
V. V. Zelenin, M. L. Korogodskii, and A. A. Lebedev
pp. 1120-1122 Full Text: PDF (49 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Analysis of the Temperature Dependence of Electron Concentration in CdGeAs2 Single Crystals
S. I. Borisenko
pp. 1123-1125 Full Text: PDF (43 kB)
Nonlinear and Dynamic Properties of Charge Transport in Polycrystalline Silicon under Optical Illumination
K. M. Doshchanov
pp. 1126-1131 Full Text: PDF (79 kB)
Specific Features of the Liquid-Phase Epitaxial Growth of SiC Epilayers in Vacuum
D. A. Bauman, A. V. Gavrilin, V. A. Ivantsov, A. M. Morozov, and N. I. Kuznetsov
pp. 1132-1134 Full Text: PDF (127 kB)
Nonadditive Photoconductivity and Induced States in Zinc Selenide Crystals
V. P. Migal'
pp. 1135-1138 Full Text: PDF (70 kB)
Electrical and Photoelectric Properties of Polycrystalline Textured CdTe
Yu. V. Klevkov, S. A. Kolosov, S. A. Medvedev, and A. F. Plotnikov
pp. 1139-1143 Full Text: PDF (63 kB)
Density of Localized States in (Pb0.78Sn0.22)0.95In0.05Te Solid Solutions
S. A. Nemov, D. A. Potapova, Yu. I. Ravich, and S. D. Khanin
pp. 1144-1146 Full Text: PDF (42 kB)
Interference of Polarized Beams near the Isotropic Point of the CdS Crystal
I. V. Brovchenko, V. I. Romanenko, and V. I. Tovstenko
pp. 1147-1150 Full Text: PDF (51 kB)
Random Potential Relief and Extrinsic Photoconductivity of Compensated Germanium
Yu. P. Druzhinin and E. G. Chirkova
pp. 1151-1154 Full Text: PDF (60 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities
N. A. Penin
pp. 1155-1160 Full Text: PDF (89 kB)
Thermoelectric Figure of Merit of a p–n Junction
Yu. I. Ravich and D. A. Pshenai-Severin
pp. 1161-1165 Full Text: PDF (64 kB)
The Influence of the Illumination Direction on the Field Distribution in High-Resistivity Metal–Semiconductor Structures
B. I. Reznikov
pp. 1166-1170 Full Text: PDF (61 kB)
Effect of the Annealing Temperature on Erbium Ion Electroluminescence in Si:(Er,O) Diodes with (111) Substrate Orientation
N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev
pp. 1171-1174 Full Text: PDF (60 kB)
LOW-DIMENSIONAL SYSTEMS
Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy
M. M. Sobolev, I. V. Kochnev[dagger], V. M. Lantratov, and N. N. Ledentsov
pp. 1175-1181 Full Text: PDF (80 kB)
The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates during Heat Treatment of SiO2 Layers Implanted with Si+ ions
G. A. Kachurin, S. G. Yanovskaya, K. S. Zhuravlev, and M.-O. Ruault
pp. 1182-1186 Full Text: PDF (75 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Special Features of Photoelectric Properties of Nanostructured Films of Hydrogenated Silicon
O. A. Golikova and M. M. Kazanin
pp. 1187-1190 Full Text: PDF (56 kB)
Numerical Calculation of the Temperature Dependences of Photoconductivity in the p-type a-Si:H
S. V. Kuznetsov
pp. 1191-1196 Full Text: PDF (82 kB)
Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence of a-Si:H(Er) Films
O. I. Kon'kov, E. I. Terukov, and L. S. Granitsyna
pp. 1197-1202 Full Text: PDF (83 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Difference Mode Generation in Injection Lasers
V. Ya. Aleshkin, A. A. Afonenko, and N. B. Zvonkov
pp. 1203-1207 Full Text: PDF (61 kB)
High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (lambda = 3.3 µm)
M. Aydaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 1208-1212 Full Text: PDF (70 kB)
Fabry–Perot a-Si:H/a-SiOx:H Microcavities with an Erbium-Doped a-Si:H Active Layer
V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel'kin, and N. A. Feoktistov
pp. 1213-1221 Full Text: PDF (130 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.