Nanoscale mapping of the W/Si(001) Schottky barrier
Loading...
Authors
Durcan, Chris A.
Balsano, Robert
LaBella, Vincent P.
Issue Date
2014
Type
Article
Language
en_US
Keywords
ballistic electron emission microscopy , W/Si(001) Schottky barrier , ballistic hole emission microscopy , microscopy , transmission electron microscopy , Rutherford backscattering spectrometry , interfacial tungsten silicide , Prietsch Ludeke fitting exponent , histogram , power law BEEM model , Gaussian component , interface dipole model
Alternative Title
Journal of Applied Physics
Abstract
The W/Si(001) Schottky barrier was spatially mapped with nanoscale resolution using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using n-type and p-type silicon substrates. The formation of an interfacial tungsten silicide is observed utilizing transmission electron microscopy and Rutherford backscattering spectrometry. The BEEM and BHEM spectra are fit utilizing a linearization method based on the power law BEEM model using the Prietsch Ludeke fitting exponent. The aggregate of the Schottky barrier heights from n-type (0.71 eV) and p-type (0.47 eV) silicon agrees with the silicon band gap at 80 K. Spatially resolved maps of the Schottky barrier are generated from grids of 7225 spectra taken over a 1 um x 1 um area and provide insight into its homogeneity. Histograms of the barrier heights have a Gaussian component consistent with an interface dipole model and show deviations that are localized in the spatial maps and are attributed to compositional fluctuations, nanoscale defects,
and foreign materials.
Description
Citation
Durcan, C. A., Balsano, R., & LaBella, V. P. (2014). Nanoscale mapping of the W/Si(001) Schottky barrier. Journal of Applied Physics, 116, 023705. doi:10.1063/1.4889851
Publisher
Journal of Applied Physics
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
0021-8979