Semiconductors V. 34, I. 12

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Semiconductors -- December 2000 Volume 34, Issue 12, pp. 1355-1411 REVIEWS The Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy of Amorphous Carbon V. I. Ivanov-Omskii, A. B. Lodygin, and S. G. Yastrebov pp. 1355-1362 Full Text: PDF (385 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Influence of Sn Resonance States on the Electrical Homogeneity of Bi2Te3 Single Crystals M. K. Zhitinskaya, S. A. Nemov, T. E. Svechnikova, P. Reinshaus, and E. Müller pp. 1363-1364 Full Text: PDF (41 kB) The In/PbTe Barrier Structures with a Thin Intermediate Insulating Layer O. A. Aleksandrova, A. T. Akhmedzhanov, R. Ts. Bondokov, V. A. Moshnikov, I. V. Saunin, Yu. M. Tairov, V. I. Shtanov, and L. V. Yashina pp. 1365-1369 Full Text: PDF (70 kB) The Formation Kinetics of a Strongly Absorbing State in a Bistable Excitonic Noncavity System Yu. V. Gudyma pp. 1370-1375 Full Text: PDF (66 kB) Photoluminescence of Ga1 – xInxAsySb1 – y Solid Solutions Lattice-Matched to InAs K. D. Moiseev, A. A. Toropov, Ya. V. Terent'ev, M. P. Mikhailova, and Yu. P. Yakovlev pp. 1376-1380 Full Text: PDF (98 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface K. D. Moiseev, A. A. Sitnikova, N. N. Faleev, and Yu. P. Yakovlev pp. 1381-1385 Full Text: PDF (149 kB) Special Features of Alpha-Particle Detection with Thin Semi-Insulating 6H-SiC Films N. B. Strokan, A. A. Lebedev, A. M. Ivanov, D. V. Davydov, and V. V. Kozlovskii pp. 1386-1390 Full Text: PDF (82 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Vibration Modes of Carbon in Hydrogenated Amorphous Carbon Modified with Copper V. I. Ivanov-Omskii, T. K. Zvonareva, and G. S. Frolova pp. 1391-1396 Full Text: PDF (99 kB) PHYSICS OF SEMICONDUCTOR DEVICES On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, G. V. Skrynnikov, Z. N. Sokolova, I. S. Tarasov, and N. V. Fetisova pp. 1397-1401 Full Text: PDF (66 kB) Long-wavelength Light-Emitting Diodes (lambda = 3.4–3.9 µm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova, and Yu. P. Yakovlev pp. 1402-1405 Full Text: PDF (59 kB) Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers A. N. Imenkov, N. M. Kolchanova, P. Kubat, S. Civish, and Yu. P. Yakovlev pp. 1406-1409 Full Text: PDF (60 kB) IN MEMORIAM Sergei Petrovich Solov'ev (1932–2000) V. N. Brudnyi, V. T. Bublik, B. N. Goshitskii, V. V. Emtsev, Yu. A. Kazanskii, R. F. Konopleva, Yu. V. Konobeev, N. G. Kolin, I. I. Kuz'min, M. G. Mil'vidskii, R. P. Ozerov, V. B. Osvenskii, V. G. Plotnikov, A. P. Simonov, L. S. Smirnov, and V. A. Kharchenko pp. 1410-1411 Full Text: PDF (52 kB)
MAIK “Nauka/Interperiodica”.
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