Semiconductors V. 31, I. 09

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MAIK “Nauka/Interperiodica”.
Semiconductors -- September 1997 Volume 31, Issue 9, pp. 875-987 Possibility of increasing the thermal stability of Si by doping with transition or rare-earth metals V. M. Glazov, G. G. Timoshina, M. S. Mikhailova, and A. Ya. Potemkin Full Text: PDF (80 kB) Optical spectroscopy of excitonic states in zinc diarsenide A. V. Mudryi, V. M. Trukhan, A. I. Patuk, I. A. Shakin, and S. F. Marenkin Full Text: PDF (72 kB) The valence band structure in chalcopyrite Cu(In,Ga)Se2 films A. S. Kindyak, V. V. Kindyak, and Yu. V. Rud' Full Text: PDF (75 kB) Electronic structure of the Er–O6 complex in silicon N. P. Il'in and V. F. Masterov Full Text: PDF (130 kB) Quenching of EL2 defect-induced luminescence in gallium arsenide by copper atoms F. M. Vorobkalo, K. D. Glinchuk, and A. V. Prokhorovich Full Text: PDF (84 kB) Investigation of the parameters of deep centers in n-6HSiC epitaxial layers obtained by gas-phase epitaxy A. A. Lebedev and D. V. Davydov Full Text: PDF (59 kB) Anomalous magnetic properties of the solid solutions (InSb1 – x(CdTe)x at low temperatures A. V. Brodovoi, V. A. Brodovoi, L. M. Knorozok, V. G. Kolesnichenko, and S. P. Kolesnik Full Text: PDF (62 kB) Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells K. G. Zolina, V. E. Kudryashov, A. N. Turkin, and A. É. Yunovich Full Text: PDF (154 kB) Polarization photoluminescence study of the complex VGaTeAs in n-type GaAs in the temperature range 77–230 K A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov Full Text: PDF (182 kB) The problem of intermediate temperatures or electric fields in the scattering of hot electrons by acoustic phonons Z. S. Kachlishvili and L. G. Kukutariya Full Text: PDF (59 kB) Mechanisms of current flow in zinc telluride–zinc selenide heterojunctions V. E. Baranyuk and V. P. Makhnii Full Text: PDF (65 kB) Resonant interaction of electrons with an rf electric field in asymmetric double-barrier structures E. I. Golant and A. B. Pashkovskii Full Text: PDF (116 kB) Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC A. A. Lebedev, N. S. Savkina, A. S. Tregubova, and M. P. Shcheglov Full Text: PDF (171 kB) Radiative recombination rate in quantum-well structures in the model without k-selection A. A. Afonenko, I. S. Manak, V. A. Shevtsov, and V. K. Kononenko Full Text: PDF (110 kB) Contact-free determination of the parameters of a 2D electron gas in GaAs/AlGaAs heterostructures I. L. Drichko and I. Yu. Smirnov Full Text: PDF (70 kB) Binding energy of Coulomb acceptors in quantum-well systems V. I. Belyavskii, M. V. Gol'dfarb, and Yu. V. Kopaev Full Text: PDF (120 kB) Photoelectric properties of GaAs/InAs heterostructures with quantum dots B. N. Zvonkov, I. G. Malkina, E. R. Lin'kova, V. Ya. Aleshkin, I. A. Karpovich, and D. O. Filatov Full Text: PDF (120 kB) Quantum-dot lasers: Principal components of the threshold current density S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. M. Georgievskii, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alfërov, and D. Bimberg Full Text: PDF (56 kB) The effect of a "Coulomb well" on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures A. V. Kavokin, S. I. Kokhanovskii, A. I. Nesvizhkii, M. É. Sasin, R. P. Seisyan, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, and S. V. Gupalov Full Text: PDF (235 kB) The effect of a longitudinal magnetic field on electronic intersubband transitions in asymmetric heterostructures F. T. Vas'ko and G. Ya. Kis Full Text: PDF (136 kB) Radiation hardness of porous silicon V. V. Ushakov, V. A. Dravin, N. N. Mel'nik, V. A. Karavanskii, E. A. Konstantinova, and V. Yu. Timoshenko Full Text: PDF (73 kB) Study of porous silicon obtained by krypton ion implantation and laser annealing M. F. Galyautdinov, N. V. Kurbatova, É. Yu. Buinova, E. I. Shtyrkov, and A. A. Bukharaev Full Text: PDF (2278 kB) Photoluminescence and photoexcitation spectra of porous silicon subjected to anodic oxidation and etching V. V. Filippov, P. P. Pershukevich, and V. P. Bondarenko Full Text: PDF (121 kB) Comparison of equilibrium and nonequilibrium charge carrier mobilities in polycrystalline synthetic diamond and amorphous diamond-like carbon films Yu. V. Pleskov, A. R. Tameev, V. P. Varnin, I. G. Teremetskaya, and A. M. Baranov Full Text: PDF (72 kB) Recombination in the space charge region and its effect on the transmittance of bipolar transistors S. V. Bulyarskii, N. S. Grushko, A. I. Somov, and A. V. Lakalin Full Text: PDF (108 kB)