Semiconductors V. 31, I. 03
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Authors
Issue Date
1997-03
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- March 1997
Volume 31, Issue 3, pp. 207-320
Modeling the hydrogen distribution accompanying electron injection in SiO2 films in strong electric fields
G. V. Gadiyak
Full Text: PDF (154 kB)
Effect of electron irradiation on the electrical properties of n-type Pb1 – xSnxTe (x ~= 2) alloys
E. P. Skipetrov and A. N. Nekrasova
Full Text: PDF (85 kB)
Transport phenomena in n-MnxHg1 – xTe/Cd0.96Zn0.04Te epitaxial films
G. V. Beketov, A. E. Belyaev, S. A. Vitusevich, S. V. Kavertsev, and S. M. Komirenko
Full Text: PDF (81 kB)
Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1 – xSix heterostructures
Yu. G. Arapov, N. A. Gorodilov, V. N. Neverov, G. I. Kharus, and N. G. Shelushinina
Full Text: PDF (169 kB)
Defects in intrinsic and pseudodoped amorphous hydrated silicon
O. A. Golikova
Full Text: PDF (85 kB)
Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates
A. N. Andreev, N. Yu. Smirnova, A. S. Tregubova, M. P. Shcheglov, and V. E. Chelnokov
Full Text: PDF (7762 kB)
Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface
D. A. Pavlov, A. F. Khokhlov, D. V. Shungurov, and V. G. Shengurov
Full Text: PDF (292 kB)
Quasi-static capacitance of a MOS-FET upon saturation of the carrier drift velocity
M. V. Cheremisin
Full Text: PDF (205 kB)
Binding energy of shallow donors in asymmetrical systems of quantum wells
V. I. Belyavskii, M. V. Gol'dfarb, S. V. Shevtsov, and Yu. V. Kopaev
Full Text: PDF (127 kB)
Nonlinear conductivity and current–voltage characteristics of two-dimensional semiconductor superlattices
Yu. A. Romanov and E. V. Demidov
Full Text: PDF (108 kB)
Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation
V. M. Émeksuzyan, G. N. Kamaev, G. N. Feofanov, and V. V. Bolotov
Full Text: PDF (127 kB)
Shubnikov–de Haas oscillations in HgSe and HgSe under hydrostatic pressure
É. A. Neifel'd, K. M. Demchuk, G. I. Kharus, A. É. Bubnova, L. I. Domanskaya, G. D. Shtrapenin, and S. Yu. Paranchich
Full Text: PDF (106 kB)
Thermoelectric figure of merit of monopolar semiconductors with finite dimensions
V. S. Zakordonets and G. N. Logvinov
Full Text: PDF (67 kB)
Galvanomagnetic phenomena in p-Hg1 – xMnxTe solid solutions
R. I. Bashirov, R. R. Bashirov, V. A. Elizarov, and A. Yu. Mollaev
Full Text: PDF (82 kB)
Lattice vibrations in CuInSe2 crystals
N. N. Syrbu, M. Bogdanash, and V. E. Tezlevan
Full Text: PDF (130 kB)
Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure
E. S. Itskevich, L. M. Kashirskaya, and V. F. Kraidenov
Full Text: PDF (75 kB)
Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation
A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov
Full Text: PDF (61 kB)
Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te
S. V. Kavertsev and A. E. Belyaev
Full Text: PDF (62 kB)
Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H
A. G. Kazanskii
Full Text: PDF (58 kB)
Recombination mechanisms in doped n-type Hg1 – xCdxTe crystals and properties of diffusion p+ – n junctions based on them
V. V. Teterkin, S. Ya. Stochanskii, and F. F. Sizov
Full Text: PDF (95 kB)
Influence of the X-valley on the tunneling and lifetime of electrons in GaAs/AlAs heterostructures
E. V. Demidov
Full Text: PDF (86 kB)
Auger recombination in strained quantum wells
A. D. Andreev and G. G. Zegrya
Full Text: PDF (152 kB)
Luminescence of porous silicon in the infrared spectral region at room temperature
G. Polisskii, F. Koch, O. M. Sreseli, and A. V. Andrianov
Full Text: PDF (75 kB)
Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide
A. V. Kalameitsev, D. A. Romanov, A. P. Kovchavtsev, G. L. Kuryshev, K. O. Postnikov, and I. M. Subbotin
Full Text: PDF (150 kB)
Luminescence of copper-aluminum diselenide
V. A. Savchuk, B. V. Korzun, N. A. Sobolev, and L. A. Makovetskaya
Full Text: PDF (72 kB)
The electrical activity of isoelectronic germanium impurities in lead chalcogenides
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, A. V. Ermolaev, and S. M. Irkaev
Full Text: PDF (47 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.