Semiconductors V. 36, I. 02

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Issue Date
2002-02
Authors
Publisher
MAIK “Nauka/Interperiodica”.
Keywords
Semiconductors
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Semiconductors -- February 2002 Volume 36, Issue 2, pp. 121-238 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors B. V. Petukhov pp. 121-125 Full Text: PDF (64 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electrical Properties of Silicon Layers Implanted with Ytterbium Ions O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev pp. 126-129 Full Text: PDF (57 kB) Effect of Optical Radiation on Internal Friction in Piezoelectric Semiconductors with Deep-Level Centers V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, and N. P. Yaroslavtsev pp. 130-135 Full Text: PDF (87 kB) "LO-Phonon" Correlation between Picosecond Superluminescence Spectrum and Special Features of Absorption Spectrum in GaAs for Non-Fermi Distribution of Carriers Induced by Picosecond Light Pulse N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov pp. 136-140 Full Text: PDF (71 kB) Linear Photovoltaic Effect in Gyrotropic Crystals R. Ya. Rasulov, Yu. E. Salenko, and D. Kambarov pp. 141-147 Full Text: PDF (97 kB) Optical Properties of Fluorite in a Wide Energy Range V. V. Sobolev and A. I. Kalugin pp. 148-152 Full Text: PDF (76 kB) Influence of Laser Pump Density on the Characteristic Time Constant and the Intermediate-Field Electromodulation E0 Component of the Photoreflectance Signal R. V. Kuz'menko, A. V. Ganzha, É. P. Domashevskaya, S. Hildenbrandt, and J. Schreiber pp. 153-156 Full Text: PDF (52 kB) Effect of Ionization on the Behavior of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing M. V. Ardyshev and V. M. Ardyshev pp. 157-159 Full Text: PDF (48 kB) Annealing of Deep Boron Centers in Silicon Carbide V. S. Ballandovich and E. N. Mokhov pp. 160-166 Full Text: PDF (86 kB) Edge-Photoluminescence Concentration Dependence in Semi-Insulating Undoped GaAs V. F. Kovalenko, M. B. Litvinova, and S. V. Shutov pp. 167-170 Full Text: PDF (66 kB) Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy V. B. Shmagin, B. A. Andreev, A. V. Antonov, Z. F. Krasil'nik, V. P. Kuznetsov, O. A. Kuznetsov, E. A. Uskova, C. A. J. Ammerlaan, and G. Pensl pp. 171-175 Full Text: PDF (70 kB) Optical Absorption in (Pb0.78Sn0.22)1 – XInXTe (X = 0.001 – 0.005) A. N. Veis pp. 176-179 Full Text: PDF (65 kB) Distribution of Charge Carriers in Dissipative Semiconductor Structures I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev pp. 180-184 Full Text: PDF (83 kB) The Effect of Charge-Carrier Drift in the Built-in Quasi-Electric Field on the Emission Spectrum for Graded-Gap Semiconductors V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov pp. 185-188 Full Text: PDF (66 kB) SEMICONDUCTOR STRUCTURE, INTERFACES, AND SURFACES Silicon Surface Treatment by Pulsed Nitrogen Plasma F. B. Baimbetov, B. M. Ibraev, and A. M. Zhukeshov pp. 189-190 Full Text: PDF (36 kB) Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si1 – xGex Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources L. K. Orlov and N. L. Ivina pp. 191-196 Full Text: PDF (78 kB) Segregation of Mobile Ions on Insulator–Semiconductor Interfaces in Metal–Insulator–Semiconductor Structures S. G. Dmitriev and Yu. V. Markin pp. 197-202 Full Text: PDF (85 kB) LOW-DIMENSIONAL SYSTEMS Photoluminescence of Anti-Modulation-Doped GaAs/AlGaAs Single Quantum Well Structures Exposed to Hydrogen Plasma Yu. A. Bumai, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, V. Nakov, and T. S. Cheng pp. 203-207 Full Text: PDF (67 kB) Energy Spectrum and Optical Properties of the Quantum Dot–Impurity Center Complex V. D. Krevchik and A. V. Levashov pp. 208-212 Full Text: PDF (72 kB) Injection Excitation of Luminescence in Multilayer nc-Si/Insulator Structures Yu. A. Berashevich, B. V. Kamenev, and V. E. Borisenko pp. 213-218 Full Text: PDF (68 kB) Temperature Dependence of the Optical Energy Gap for the CdSxSe1 – x Quantum Dots V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, and N. I. Malysh pp. 219-223 Full Text: PDF (62 kB) The Dicke Superradiation in Quantum Heterostructures under Optical Pumping A. I. Klimovskaya, E. G. Gule, and Yu. A. Driga pp. 224-225 Full Text: PDF (35 kB) Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures in the Terahertz Range N. N. Zinov'ev, A.V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, G. Hill, and J. M. Chamberlain pp. 226-229 Full Text: PDF (55 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition V. P. Afanas'ev, A. S. Gudovskikh, V. N. Nevedomskii, A. P. Sazanov, A. A. Sitnikova, I. N. Trapeznikova, and E. I. Terukov pp. 230-234 Full Text: PDF (155 kB) PHYSICS OF SEMICONDUCTOR DEVICES Optimal Doping of the Drift Region in Unipolar Diodes and Transistors A. S. Kyuregyan pp. 235-238 Full Text: PDF (54 kB)
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