Semiconductors V. 37, I. 05

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Semiconductors -- May 2003 Volume 37, Issue 5, pp. 493-615 REVIEW Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, and S. I. Chikichev pp. 493-518 Full Text: PDF (384 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe T. I. Galkina, A. Yu. Klokov, A. I. Sharkov, Yu. V. Korostelin, and V. V. Zaitsev pp. 519-522 Full Text: PDF (60 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Magnetooptical Oscillations in Bismuth at T => 77 K O. V. Kondakov and K. G. Ivanov pp. 523-525 Full Text: PDF (47 kB) A Local Specific Feature of Variation in the Spectrum of Picosecond Superluminescence upon Adding Excited Carriers to a Non-Fermi Electron–Hole Plasma in GaAs N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov pp. 526-531 Full Text: PDF (76 kB) Phonon-Assisted Exciton Luminescence in GaN Layers Grown by MBE and Chloride-Hydride VPE M. G. Tkachman, T. V. Shubina, V. N. Jmerik, S. V. Ivanov, P. S. Kop'ev, T. Paskova, and B. Monemar pp. 532-536 Full Text: PDF (72 kB) Electronic Properties of Irradiated Semiconductors. A Model of the Fermi Level Pinning V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin pp. 537-545 Full Text: PDF (120 kB) Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions S. A. Smagulova, I. V. Antonova, E. P. Neustroev, and V. A. Skuratov pp. 546-550 Full Text: PDF (68 kB) Diffusion of Europium in Silicon D. É. Nazyrov pp. 551-552 Full Text: PDF (28 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Photosensitive Structures Based on CdGa2Se4 Single Crystals A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius pp. 553-558 Full Text: PDF (87 kB) LOW-DIMENSIONAL SYSTEMS Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Yu. G. Musikhin, A. F. Tsatsul'nikov, V. M. Ustinov, and N. N. Ledentsov pp. 559-563 Full Text: PDF (105 kB) Model of Multi-Island Single-Electron Arrays Based on the Monte Carlo Method I. I. Abramov, S. A. Ignatenko, and E. G. Novik pp. 564-568 Full Text: PDF (63 kB) Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons under Conditions of Ionized-Impurity Scattering in a Superlattice with Doped Quantum Wells S. I. Borisenko pp. 569-572 Full Text: PDF (57 kB) Electronic and Optical Properties of AlAs/AlxGa1 – xAs(110) Superlattices G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov pp. 573-580 Full Text: PDF (93 kB) Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov, G. N. Shkerdin, and N. G. Yaremenko pp. 581-585 Full Text: PDF (69 kB) Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells L. E. Vorob'ev, S. N. Danilov, V. L. Zerova, and D. A. Firsov pp. 586-593 Full Text: PDF (101 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC M. G. Mynbaeva, A. A. Lavrent'ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, and A. A. Lebedev pp. 594-597 Full Text: PDF (48 kB) Quantum-Chemical Simulation of the Influence of Defects on the Infrared Spectrum and the Electronic Structure of a-Se A. S. Zyubin, F. V. Grigor'ev, and S. A. Dembovskii pp. 598-603 Full Text: PDF (75 kB) Phase Transformations Initiated in Thin Layers of Amorphous Silicon by Nanosecond Excimer Laser Pulses G. D. Ivlev and E. I. Gatskevich pp. 604-610 Full Text: PDF (119 kB) PHYSICS OF SEMICONDUCTOR DEVICES Detection of Hydrogen Impurity in Silicon Radiation Detectors L. F. Makarenko, F. P. Korshunov, S. B. Lastovskii, and N. I. Zamyatin pp. 611-615 Full Text: PDF (66 kB)
MAIK “Nauka/Interperiodica”.
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