Semiconductors V. 31, I. 01

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Issue Date
1997-01
Authors
Publisher
MAIK “Nauka/Interperiodica”.
Keywords
Semiconductors
Abstract
Description
Semiconductors -- January 1997 Volume 31, Issue 1, pp. 1-96 Photoelectric amplification of variband photoresistors V. G. Savitskii and B. S. Sokolovskii Full Text: PDF (82 kB) Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon L. L. Fedorenko, A. D. Sardarly, É. B. Kaganovich, S. V. Svechnikov, S. P. Dikii, and S. V. Baranets Full Text: PDF (92 kB) Electrical properties of ZnSe/GaAs (100) heterostructures grown by photostimulated vapor-phase epitaxy A. V. Kovalenko Full Text: PDF (65 kB) Electrical and photoelectric properties of a Pd–p0-Si–p-Si structure with a disordered intermediate p0 layer S. V. Slobodchikov, Kh. M. Salikhov, E. V. Russu, M. M. Meredov, and A. I. Yazlyeva Full Text: PDF (91 kB) Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maksimov,, N. N. Faleev, and P. S. Kop'ev Full Text: PDF (90 kB) Carrier accumulation and strong electrode sheath fields in illuminated, high-resistivity MISIM structures B. I. Reznikov and G. V. Tsarenkov Full Text: PDF (161 kB) Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy A. V. Kovalenko Full Text: PDF (74 kB) Photoelectric and photomagnetic properties of the gapless semiconductor CdxHg1 – xTe in the infrared and millimeter spectral regions when an energy gap is opened S. G. Gasan-zade, E. A. Sal'kov, and G. A. Shepel'skii Full Text: PDF (136 kB) Ion transfer processes in an insulating layer containing traps E. I. Gol'dman Full Text: PDF (125 kB) Vibrational spectra of CuInS2xSe2(1 – x) solid solutions I. V. Bodnar' Full Text: PDF (92 kB) Charge instability effects in the system silicon carbide–insulator V. A. Karachinov Full Text: PDF (50 kB) Optical properties of quasiperiodic and aperiodic PbS–CdS superlattices S. F. Musikhin, V. I. Il'in, O. V. Rabizo, L. G. Bakueva, and T. V. Yudintseva Full Text: PDF (91 kB) Waveguide properties of gallium, aluminum, and indium nitride heterostructures V. E. Bugrov and A. S. Zubrilov Full Text: PDF (74 kB) Photoluminescence of InSb quantum dots in GaAs and GaSb matrices A. F. Tsatsul'nikov, N. N. Ledentsov, M. V. Maksimov, B. Ya. Mel'tser, P. V. Neklyudov, S. V. Shaposhnikov, B. V. Volovik, I. L. Krestnikov, A. V. Sakharov, N. A. Bert,, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (123 kB) Investigation of the structure of the edge of the valence band of Cd1 – xMnxS crystals on the basis of magnetooptical measurements V. G. Abramishvili, A. V. Komarov, S. M. Ryabchenko, and Yu. G. Semenov Full Text: PDF (121 kB) Analysis of the temporal instability of the parameters of an insulator/III–V compound by the isothermal capacitance relaxation method L. S. Berman Full Text: PDF (82 kB) Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide L. S. Berman Full Text: PDF (35 kB) Electron-phonon scattering engineering J. Pozela, V. Juciene, A. Namajunas, and K. Pozela Full Text: PDF (85 kB) Monte Carlo simulation of the low-temperature mobility of two-dimensional electrons in a silicon inversion layer V. M. Borzdov and T. A. Petrovich Full Text: PDF (92 kB) Study of PbTe photodiodes on a buffer sublayer of porous silicon L. V. Belyakov, I. B. Zakharova, T. I. Zubkova, S. F. Musikhin, and S. A. Rykov Full Text: PDF (64 kB) High-frequency capacitance–voltage characteristic of GaAs-based, thin-film structures N. B. Gorev, T. V. Makarova, E. F. Prokhorov, A. T. Ukolov, and V. I. Éppel' Full Text: PDF (72 kB) Quasiballistic model of current transport and formation of the S-type current–voltage characteristic in the lightly doped, double-barrier heterostructure AlxGa1 – xAs–GaAs–AlAs A. M. Belyantsev and Yu. Yu. Romanova Full Text: PDF (102 kB) Thermal stability of vertically coupled InAs–GaAs quantum dot arrays A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, M. V. Maksimov,, A. F. Tsatsul'nikov, N. N. Ledentsov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (63 kB) Modulation of a quantum well potential by a quantum-dot array A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov,, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, A. A. Suvorova, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (186 kB) Cathodoluminescence of p–n–p microstructures in CuInSe2 crystals S. G. Konnikov, G. A. Medvedkin, M. M. Sobolev, and S. A. Solov'ev Full Text: PDF (82 kB)
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