Semiconductors V. 32, I. 05

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Semiconductors -- May 1998 Volume 32, Issue 5, pp. 457-571 Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties M. G. Mil'vidskii and V. V. Chaldyshev Full Text: PDF (359 kB) How the type of bombarding ion affects the formation of radiation defects in silicon M. Yu. Barabanenko, A. V. Leonov, V. N. Mordkovich, and N. M. Omel'yanovskaya Full Text: PDF (65 kB) Creation of vicinal facets on the surface of gallium arsenide with orientations close to (100) under conditions of nonequilibrium mass transfer M. V. Baizer, V. Yu. Vitukhin, I. V. Zakurdaev, and A. I. Rudenko Full Text: PDF (355 kB) A quantum-well model and the optical absorption edge in structurally nonuniform a-Si:H-based alloys B. G. Budagyan, A. A. Aivazov, D. A. Stryakhilev, and E. M. Sokolov Full Text: PDF (238 kB) Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs I. L. Bronevoi and A. N. Krivonosov Full Text: PDF (105 kB) Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs I. L. Bronevoi and A. N. Krivonosov Full Text: PDF (80 kB) Distinctive features of the far-infrared reflection spectra of the semimagnetic semiconductors Hg1 – xMnxTe1 – ySey A. I. Belogorokhov, V. A. Kul'bachinskii, P. D. Mar'yanchuk, and I. A. Churilov Full Text: PDF (67 kB) Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS : Mn films Ya. F. Kononets, L. I. Veligura, and O. A. Ostroukhova Full Text: PDF (75 kB) Natural nonuniformities in the height of a Schottky barrier V. B. Bondarenko, Yu. A. Kudinov, S. G. Ershov, and V. V. Korablev Full Text: PDF (56 kB) Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and G. Biskupski Full Text: PDF (133 kB) Hopping-induced energy relaxation with allowance for all possible versions of intercenter transitions A. A. Kiselev Full Text: PDF (113 kB) Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals F. M. Vorobkalo, K. D. Glinchuk, and A. V. Prokhorovich Full Text: PDF (92 kB) Differential resistance of Au/GaAs1 – xSbx tunneling contacts in the zero-bias anomaly region. I. Contacts to n-GaAs1 – xSbx T. A. Polyanskaya, T. Yu. Allen, Kh. G. Nazhmudinov, S. G. Yastrebov, and I. G. Savel'ev Full Text: PDF (104 kB) Differential resistance of Au/GaAs1 – xSbx tunneling contacts near the zero-bias anomaly. II. Contacts to p-GaAs1 – xSbx T. A. Polyanskaya, T. Yu. Allen, Kh. G. Nazhmudinov, and I. G. Savel'ev Full Text: PDF (108 kB) Binding energy of exciton-impurity complexes in semiconductors with diamond and zinc blende structure S. M. Zubkova, E. I. Shul'zinger, and E. V. Smelyanskaya Full Text: PDF (109 kB) Heterojunction based on semiconductors with the chain structure TlSe–TlInSe2 I. V. Alekseev Full Text: PDF (107 kB) Mechanism of anodic electroluminescence of porous silicon in electrolytes D. N. Goryachev, L. V. Belyakov, O. M. Sreseli, and G. Polisskii Full Text: PDF (75 kB) Transport properties of magnetoexcitons in coupled quantum wells Yu. E. Lozovik and A. M. Ruvinskii Full Text: PDF (156 kB) Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier V. G. Popov, Yu. V. Dubrovskii, Yu. N. Khanin, E. E. Vdovin, D. K. Maude, J.-C. Portal, T. G. Andersson, and J. Thordson Full Text: PDF (96 kB) Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1 – xAs superlattice with doped quantum wells S. I. Borisenko and G. F. Karavaev Full Text: PDF (129 kB) Investigation of the photovoltage in por-Si/p-Si structures by the pulsed-photovoltage method V. Yu. Timoshenko, E. A. Konstantinova, and T. Dittrich Full Text: PDF (309 kB) Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p–i–n structures based on them M. M. Mezdrogina, A. V. Abramov, G. N. Mosina, I. N. Trapeznikova, and A. V. Patsekin Full Text: PDF (341 kB) Nonmonotonic character of the growth-temperature dependence of the resistance of polycrystalline silicon films D. V. Shengurov, D. A. Pavlov, V. N. Shabanov, V. G. Shengurov, and A. F. Khokhlov Full Text: PDF (184 kB) Characteristic features of the IR spectra of amorphous boron-doped hydrated silicon I. A. Kurova, L. I. Belogorokhova, and A. I. Belogorokhov Full Text: PDF (56 kB) Charge-carrier exclusion and accumulation intensified by ohmic contacts V. K. Malyutenko, G. I. Teslenko, and V. V. Vainberg Full Text: PDF (105 kB)
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