Semiconductors V. 33, I. 01

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MAIK “Nauka/Interperiodica”.
Semiconductors -- January 1999 Volume 33, Issue 1, pp. 1-105 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0 – 1.6 µm V. Yu. Davydov, V. V. Lundin, A. N. Smirnov, N. A. Sobolev, A. S. Usikov, A. M. Emel'yanov, M. I. Makoviichuk, and E. O. Parshin Full Text: PDF (93 kB) Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, V. N. Vasil'kov, and E. I. Slyn'ko Full Text: PDF (75 kB) Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse I. L. Bronevoi and A. N. Krivonosov Full Text: PDF (105 kB) Fano effect in the magnetoabsorption spectra of gallium arsenide D. V. Vasilenko, N. V. Luk'yanova, and R. P. Seisyan Full Text: PDF (99 kB) Correlation between the material parameters and conditions for the excitation of recombination waves in Si<S> M. K. Bakhadyrkhanov, U. Kh. Kurbanova, and N. F. Zikrillaev Full Text: PDF (53 kB) Self-compensation in PbSe:Tl thin films V. A. Zykov, T. A. Gavrikova, S. A. Nemov, and P. A. Osipov Full Text: PDF (68 kB) Electronic structure of C60 films V. V. Sobolev and E. L. Busypina Full Text: PDF (104 kB) Quasi-gapless semiconductor: p-type indium arsenide M. I. Daunov, I. K. Kamilov, A. B. Magomedov, and A. Sh. Kirakosyan Full Text: PDF (80 kB) Optical absorption in PbGa2Se4 single crystals B. G. Tagiev, N. N. Musaeva, and R. B. Dzhabbarov Full Text: PDF (72 kB) Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}–SnGa(SiGa) complexes in GaAs produced as a result of resonant polarized excitation A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov Full Text: PDF (90 kB) Photoconductivity spectra of CdHgTe crystals with photoactive inclusions A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko Full Text: PDF (97 kB) Theory of photovoltaic effects in crystals without an inversion center R. Ya. Rasulov, Yu. E. Salenko, A. Tukhtamatov, T. Éski, and A. É. Avliyaev Full Text: PDF (158 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Ultrashallow p+ – n junctions in Si(111): electron-beam diagnostics of the surface region N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. A. Andronov, and S. V. Robozerov Full Text: PDF (130 kB) Investigating the photosensitivity spectra of n-type GaAs–As2Se3 heterojunctions I. P. Arzhanukhina, K. P. Kornev, and U. V. Seleznev Full Text: PDF (67 kB) LOW-DIMENSIONAL SYSTEMS Charging of deep-level centers and negative persistent photoconductivity in modulation-doped AlGaAs/GaAs heterostructures V. I. Borisov, V. A. Sablikov, I. V. Borisova, and A. I. Chmil' Full Text: PDF (111 kB) Conductivity of thin nanocrystalline silicon films V. G. Golubev, L. E. Morozova, A. B. Pevtsov, and N. A. Feoktistov Full Text: PDF (58 kB) Vertical screening in doped, intentionally disordered semiconductor superlattices I. P. Zvyagin and M. A. Ormont Full Text: PDF (91 kB) Optical intersubband transitions in strained quantum wells utilizing In1 – xGaxAs/InP solid solutions S. A. Stoklitskii, V. N. Murzin, Yu. A. Mityagin, B. Monemar, and P. O. Holtz Full Text: PDF (230 kB) Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix Zhao Zhen, D. A. Bedarev, B. V. Volovik, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, and P. S. Kop'ev Full Text: PDF (92 kB) Nonradiative recombination at shallow bound states in quantum-confined systems in an electric field É. P. Sinyavskii and A. M. Rusanov Full Text: PDF (118 kB) Radiative tunneling recombination and luminescence of trapezoidal delta-doped superlattices V. V. Osipov, A. Yu. Selyakov, and M. Foygel Full Text: PDF (112 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Influence of thermal annealing on the intensity of the 1.54-µm photoluminescence band in erbium-doped amorphous hydrogenated silicon A. A. Andreev, V. B. Voronkov, V. G. Golubev, A. V. Medvedev, and A. B. Pevtsov Full Text: PDF (76 kB) Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity O. A. Golikova and M. M. Kazanin Full Text: PDF (78 kB) Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev Full Text: PDF (99 kB)