Semiconductors V. 31, I. 10

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Issue Date
1997-10
Authors
Publisher
MAIK “Nauka/Interperiodica”.
Keywords
Semiconductors
Abstract
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Semiconductors -- October 1997 Volume 31, Issue 10, pp. 989-1099 Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: GaxIn1 – xPyAs1 – y A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, V. M. Ustinov, and P. S. Kop'ev Full Text: PDF (118 kB) Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon V. P. Kalinushkin, A. N. Buzynin, D. I. Murin, V. A. Yuryev, and O. V. Astaf'ev Full Text: PDF (180 kB) Molecular effect in the implantation of light ions in semiconductors I. A. Abroyan and L. M. Nikulina Full Text: PDF (87 kB) Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures G. B. Galiev, R. M. Imamov, B. K. Medvedev, V. G. Mokerov, É. Kh. Mukhamedzhanov, É. M. Pashaev, and V. B. Cheglakov Full Text: PDF (67 kB) Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at h num = 1.01 eV in n-type GaAs K. D. Glinchuk and A. V. Prokhorovich Full Text: PDF (64 kB) Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity A. G. Andreev, A. G. Zabrodskii, S. V. Egorov, and I. P. Zvyagin Full Text: PDF (107 kB) Resonance acceptor states in uniaxially strained semiconductors M. A. Odnoblyudov, A. A. Pakhomov, V. M. Chistyakov, and I. N. Yassievich Full Text: PDF (176 kB) Nuclear magnetic resonance spectra of 119Sn and 125Te in SnTe and SnTe:Mn V. V. Slyn'ko, E. I. Slyn'ko, A. G. Khandozhko, and Yu. K. Vygranenko Full Text: PDF (78 kB) Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering A. M. Danishevskii, A. S. Tregubova, and A. A. Lebedev Full Text: PDF (312 kB) Hole boil-off and the magnetoresitance of the semimagnetic semiconductor Hg1 – xMnxTe1 – ySey N. K. Lerinman, P. D. Mar'yanchuk, A. I. Ponomarev, L. D. Sabirzyanova, and N. G. Shelushinina Full Text: PDF (166 kB) Effect of infrared laser radiation on the structure and electrophysical properties of undoped single-crystal InAs S. V. Plyatsko and V. P. Klad'ko Full Text: PDF (73 kB) Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities O. V. Vakulenko, V. N. Kravchenko, V. D. Ryzhikov, V. I. Silin, and N. G. Starzhinskii Full Text: PDF (86 kB) Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures N. L. Bazhenov, G. G. Zegrya, V. I. Ivanov-Omskii, M. P. Mikhailova, M. Yu. Mikhailov, K. D. Moiseev, V. A. Smirnov, and Yu. P. Yakovlev Full Text: PDF (69 kB) Effect of deep levels on current excitation in 6H-SiC diodes N. I. Kuznetsov and J. A. Edmond Full Text: PDF (106 kB) Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes T. V. Blank, Yu. A. Gol'dberg, O. V. Konstantinov, O. I. Obolenskii, and E. A. Posse Full Text: PDF (89 kB) A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system G. É. Tsyrlin, N. P. Korneeva, V. N. Demidov, N. K. Polyakov, V. N. Petrov, and N. N. Ledentsov Full Text: PDF (45 kB) High-temperature irradiation of gallium arsenide V. V. Peshev and S. V. Smorodinov Full Text: PDF (35 kB) The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface S. Yu. Davydov Full Text: PDF (120 kB) Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy P. V. Neklyudov, S. V. Ivanov, B. Ya. Mel'tser, and P. S. Kop'ev Full Text: PDF (81 kB) Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures Yu. B. Vasil'ev, S. D. Suchalkin, S. V. Ivanov, B. Ya. Mel'tser, A. F. Tsatsul'nikov, P. V. Neklyudov, and P. S. Kop'ev Full Text: PDF (60 kB) Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maksimov, and N. N. Ledentsov Full Text: PDF (106 kB) Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy V. M. Ustinov, A. E. Zhukov, A. F. Tsatsul'nikov, A. Yu. Egorov, A. R. Kovsh, M. V. Maksimov, A. A. Suvorova, N. A. Bert, and P. S. Kop'ev Full Text: PDF (302 kB) Structure and properties of porous silicon obtained by photoanodization E. V. Astrova, V. V. Ratnikov, R. F. Vitman, A. A. Lebedev, A. D. Remenyuk, and Yu. V. Rud' Full Text: PDF (140 kB) Optimization of the operating conditions of thermocouples allowing for nonlinearity of the temperature distribution S. V. Ordin Full Text: PDF (70 kB) Effect of an external bias voltage on the photoelectric properties of silicon MIS/IL structures Ya. S. Budzhak, V. Yu. Erokhov, and I. I. Mel'nik Full Text: PDF (127 kB) Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)] D. A. Pavlov, A. F. Khokhlov, D. V. Shungurov, and V. G. Shengurov Full Text: PDF (18 kB)
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