Disorder density of states in supported graphene

Loading...
Thumbnail Image
Authors
Lee, Ji Ung
Sinha, Dhiraj
Issue Date
2014
Type
Article
Language
en_US
Keywords
nanotechnology , graphene , disorder density of states , transient current analysis
Research Projects
Organizational Units
Journal Issue
Alternative Title
Abstract
Transport in graphene is impacted by disorder. Disorder, which can occur on supported graphene, manifests as a significant shift in the Fermi level position from the charge neutrality point (Dirac point) and leads to carrier scattering. Here, we provide a direct measurement of the disorder density of states (DOS). We show that the disorder is extrinsic to graphene and is characterized by a continuum of DOS located at the graphene-substrate interface. A key feature is a Gaussian-like DOS that causes pinning of the Fermi level and the shift in the Dirac point.
Description
Peer-reviewed journal article
Citation
Sinha, D., & Lee, J. U. (2014). Disorder density of states in supported graphene. Journal of Applied Physics, 116(7), 074516. doi:10.1063/1.4893548
Publisher
Journal of Applied Physics
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
0021-8979
EISSN