Broadband 2-μm emission on silicon chips: Monolithically integrated Holmium lasers
Journal Title
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Issue Date
2018
Authors
Li, Nanxi
Magden, Emir Salih
Su, Zhan
Singh, Neetesh
Ruocco, Alfonso
Xin, Ming
Byrd, Matthew
Callahan, Patrick T.
Bradley, Jonathan D.
Baiocco, Christopher
Publisher
Optical Society of America
Keywords
integrated optics , integrated optics devices , lasers , guided waves , holmium-doped distributed feedback laser
Abstract
Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al2O3:Ho3+ glass is used as gain medium, which provides broadband emission around 2 μm. By varying the distributed feedback grating period and Al2O3:Ho3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 μm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 μm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.
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