Broadband 2-μm emission on silicon chips: Monolithically integrated Holmium lasers
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Authors
Li, Nanxi
Magden, Emir Salih
Su, Zhan
Singh, Neetesh
Ruocco, Alfonso
Xin, Ming
Byrd, Matthew
Callahan, Patrick T.
Bradley, Jonathan D.
Issue Date
2018
Type
Article
Language
en_US
Keywords
integrated optics , integrated optics devices , lasers , guided waves , holmium-doped distributed feedback laser
Alternative Title
Optics Express
Abstract
Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al2O3:Ho3+ glass is used as gain medium, which provides broadband emission around 2 μm. By varying the distributed feedback grating period and Al2O3:Ho3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 μm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 μm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.
Description
Citation
Li, N. X., Magden, E. S., Su, Z., Singh, N., Ruocco, A., Xin, M., . . . Watts, M. R. (2018). Broadband 2- μm emission on silicon chips: Monolithically integrated Holmium lasers. Optics Express, 26(3), 2220-2230. doi:10.1364/oe.26.002220
Publisher
Optical Society of America
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
1094-4087