Semiconductors V. 35, I. 05

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2001-05
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en_US
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Semiconductors
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Semiconductors -- May 2001 Volume 35, Issue 5, pp. 491-611 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Oscillatory "Reactions" Involving the Oxygen and Carbon Background Impurities in Silicon Undergoing Heat Treatment V. V. Lukjanitsa pp. 491-498 Full Text: PDF (114 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Thermal Conductivity and the Wiedemann–Franz Relation in Melts of Indium and Gallium Antimonides Ya. B. Magomedov and A. R. Bilalov pp. 499-501 Full Text: PDF (43 kB) Specific Features of Photoconductivity in Thin n-PbTe:Ga Epilayers B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, and V. N. Vasil'kov pp. 502-505 Full Text: PDF (61 kB) Dynamic Effect of a Constant Electric Field on the Kinetics of Photons Interacting with Electrons in a Semiconductor R. Kh. Amirov and V. N. Gusyatnikov pp. 506-511 Full Text: PDF (142 kB) Studies of the Infrared Luminescence of ZnSe Doped with Copper and Oxygen N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk pp. 512-515 Full Text: PDF (51 kB) On the Origin of the Luminescence Band with hnum = 1.5133 eV in Gallium Arsenide K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk pp. 516-519 Full Text: PDF (62 kB) BeCdSe: A New Material for the Active Region in Devices Operating in the Blue–Green Region of the Spectrum O. V. Nekrutkina, S. V. Sorokin, V. A. Kaigorodov, A. A. Sitnikova, T. V. Shubina, A. A. Toropov, S. V. Ivanov, P. S. Kop'ev, G. Reuscher, V. Wagner, J. Geurts, A. Waag, and G. Landwehr pp. 520-524 Full Text: PDF (95 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Method for Determining the Stoichiometric Composition of a Mercury Cadmium Telluride Solid Solution from Capacitance–Voltage Characteristics I. M. Ivankiv, A. M. Yafyasov, V. B. Bogevol'nov, and A. D. Perepelkin pp. 525-528 Full Text: PDF (51 kB) Mechanism of the Current Flow in Pd–(Heavily Doped p-AlxGa1 – xN) Ohmic Contact T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev, A. V. Fomin, and A. E. Cherenkov pp. 529-532 Full Text: PDF (60 kB) Thermodynamic Analysis of the Growth of GaAsN Ternary Compounds by Molecular Beam Epitaxy V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, and V. M. Ustinov pp. 533-538 Full Text: PDF (67 kB) An Analysis of the Charge-Transport Mechanisms Defining the Reverse Current–Voltage Characteristics of the Metal–GaAs Barriers S. V. Bulyarskii and A. V. Zhukov pp. 539-542 Full Text: PDF (67 kB) LOW-DIMENSIONAL SYSTEMS Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System I. A. Karpovich, A. P. Gorshkov, S. B. Levichev, S. V. Morozov, B. N. Zvonkov, and D. O. Filatov pp. 543-549 Full Text: PDF (104 kB) Manifestation of the Upper Hubbard Band in the Electrical Conductivity of Two-Dimensional p-GaAs–AlGaAs Structures N. V. Agrinskaya, Yu. L. Ivanov, V. M. Ustinov, and D. A. Poloskin pp. 550-553 Full Text: PDF (61 kB) Superlattice Conductivity under the Action of a Nonlinear Electromagnetic Wave D. V. Zav'yalov and S. V. Kryuchkov pp. 554-556 Full Text: PDF (42 kB) Nonlinear Interaction of Waves in a Semiconductor Superlattice A. A. Bulgakov and O. V. Shramkova pp. 557-564 Full Text: PDF (97 kB) The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering A. A. Prokof'ev, M. A. Odnoblyudov, and I. N. Yassievich pp. 565-572 Full Text: PDF (102 kB) Electron Transport in Silicon Carbide Natural Superlattices under the Wannier–Stark Quantization Conditions: Basic Issues and Application Prospects V. I. Sankin and P. P. Shkrebii pp. 573-578 Full Text: PDF (129 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Silicon Network in a-Si:H Films Containing Ordered Inclusions O. A. Golikova, E. V. Bogdanova, M. M. Kazanin, A. N. Kuznetsov, V. A. Terekhov, V. M. Kashkarov, and O. V. Ostapenko pp. 579-582 Full Text: PDF (61 kB) Excitation of Luminescence in Porous Silicon with Adsorbed Ozone Molecules S. N. Kuznetsov, V. B. Pikulev, A. A. Saren, Yu. E. Gardin, and V. A. Gurtov pp. 583-587 Full Text: PDF (66 kB) Drift Mobility of Carriers in Porous Silicon N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, and N. N. Smirnova pp. 588-590 Full Text: PDF (39 kB) The Effect of Bombardment with Carbon Ions on the Nanostructure of Diamond-like Films I. A. Faizrakhmanov, V. V. Bazarov, V. A. Zhikharev, and I. B. Khaibullin pp. 591-597 Full Text: PDF (93 kB) PHYSICS OF SEMICONDUCTOR DEVICES Light Emitting Diodes for the Spectral Range lambda = 3.3–4.3 µm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C (Part 21) M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 598-604 Full Text: PDF (106 kB) A New Structure of the CdS-Based Surface-Barrier Ultraviolet Sensor S. Yu. Pavelets, Yu. N. Bobrenko, A. V. Komashchenko, and T. E. Shengeliya pp. 605-607 Full Text: PDF (56 kB) Impact Ionization Wave Breakdown of Drift Step Recovery Diodes V. A. Kozlov, A. F. Kardo-Sysoev, and V. I. Brylevskii pp. 608-611 Full Text: PDF (58 kB)
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