Pulse width and height modulation for multi-level resistance in bi-layer TaOx based RRAM

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Authors
Alamgir, Zahiruddin
Beckmann, Karsten
Holt, Joshua
Cady, Nathaniel C.
Issue Date
2017-08-11
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Article
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en_US
Keywords
neuromorphic computing , cognitive computing , resistive random access memory , memristor , non-volatile memory , computer memory , computer storage , data storage , metal-insulator-metal (MIM) , structure , multilevel cell (MLC) storage
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Abstract
Mutli-level switching in resistive memory devices enables a wide range of computational paradigms, including neuromorphic and cognitive computing. To this end, we have developed a bilayer tantalum oxide based resistive random access memory device using Hf as the oxygen exchange layer. Multiple, discrete resistance levels were achieved by modulating the RESET pulse width and height, ranging from 2 kX to several MX. For a fixed pulse height, OFF state resistance was found to increase gradually with the increase in the pulse width, whereas for a fixed pulse width, the increase in the pulse height resulted in drastic changes in resistance. Resistive switching in these devices transitioned from Schottky emission in the OFF state to tunneling based conduction in the ON state, based on I-V curve fitting and temperature dependent current measurements. These devices also demonstrated endurance of more than 108 cycles with a satisfactory Roff/ Ron ratio and retention greater than 104 s
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Appl. Phys. Lett. 111, 063111 (2017)
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AIP Publishing
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