Semiconductors V. 33, I. 10
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Authors
Issue Date
1999-10
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- October 1999
Volume 33, Issue 10, pp. 1049-1155
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment
I. V. Antonova, V. P. Popov, D. V. Kilanov, E. P. Neustroev, and A. Misuk
Full Text: PDF (55 kB)
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic
G. É. Tsirlin, V. N. Petrov, N. K. Polyakov, S. A. Masalov, A. O. Golubok, D. V. Denisov, Yu. A. Kudryavtsev, B. Ya. Ber, and V. M. Ustinov
Full Text: PDF (553 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Detection of paramagnetic recombination centers in proton-irradiated silicon
L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, and V. V. Kozlovskii
Full Text: PDF (47 kB)
Luminescence properties of InAs layers and p–n structures grown by metallorganic chemical vapor deposition
T. I. Voronina, N. V. Zotova, S. S. Kizhayev, S. S. Molchanov, and Yu. P. Yakovlev
Full Text: PDF (68 kB)
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
A. S. Zubrilov, Yu. V. Melnik, A. E. Nikolaev, M. A. Jacobson, D. K. Nelson, and V. A. Dmitriev
Full Text: PDF (70 kB)
The energy spectrum of lead selenide implanted with oxygen
A. N. Veis and N. A. Suvorova
Full Text: PDF (63 kB)
Autosolitons in an electron–hole plasma/excitons system in silicon at 4.2 K
A. M. Musaev
Full Text: PDF (57 kB)
Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul', V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
Full Text: PDF (55 kB)
Oxygen and Erbium related donor centers in Czochralski grown silicon implanted with erbium
V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, E. I. Shek, N. A. Sobolev, J. Michel, and L. C. Kimerling
Full Text: PDF (66 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Electronic properties of a GaAs surface treated with hydrochloric acid
E. F. Venger, S. I. Kirillova, and V. E. Primachenko
Full Text: PDF (70 kB)
Photoconversion in heterocontacts of CdTe and its analogs with protein
Yu. V. Rud', V. Yu. Rud', I. V. Bodnar', V. V. Shatalova, and G. A. Il'chuk
Full Text: PDF (57 kB)
Fabrication and photosensitivity of AgInSe2/III–VI isotypic heterojunctions
V. Yu. Rud', V. F. Gremenok, Yu. V. Rud', R. N. Bekimbetov, and I. V. Bodnar'
Full Text: PDF (44 kB)
Influence of atomic-hydrogen treatment on the surface properties of n–n+ GaAs structures
N. A. Torkhov and S. V. Eremeev
Full Text: PDF (1173 kB)
Production and properties of In/HgGa2S4 Schottky barriers
V. Yu. Rud', Yu. V. Rud', M. C. Ohmer, and P. G. Schunemann
Full Text: PDF (47 kB)
Effect of hydrogen on the current–voltage characteristics of Pd/p-InGaAsP and Pd/n-InGaAs barrier structures
V. P. Voronkov and L. S. Khludkova
Full Text: PDF (52 kB)
LOW-DIMENSIONAL SYSTEMS
Determination of the electron mobility and density in thin semiconductor films at microwave frequencies using the magnetoplasma resonance
P. A. Borodovskii and A. F. Buldygin
Full Text: PDF (65 kB)
Modeling of the electron distribution in AlGaAs/GaAs (delta-Si) structures grown on vicinal surfaces
V. M. Osadchii
Full Text: PDF (43 kB)
Effect of the configuration of a quantum wire on the electron–phonon interaction
O. V. Kibis
Full Text: PDF (46 kB)
Inelastic scattering of hot electrons by neutral donors in heavily silicon-doped GaAs/AlAs quantum wells
I. A. Akimov, V. F. Sapega, D. N. Mirlin, B. P. Zakharchenya, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, and A. A. Sirenko
Full Text: PDF (58 kB)
Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells
S. I. Borisenko
Full Text: PDF (82 kB)
Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
V. Ya. Aleshkin, N. A. Bekin, M. N. Buyanova, A. V. Murel', and B. N. Zvonkov
Full Text: PDF (83 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Role of impurities in the formation of silicyne (long-chain silicon): theory and experiment
A. I. Mashin, A. F. Khokhlov, S. K. Ignatov, A. A. Shchepalov, and A. G. Razuvaev
Full Text: PDF (70 kB)
Formation of optically active centers in films of erbium-doped amorphous hydrated silicon
M. M. Mezdrogina, M. P. Annaorazova, E. I. Terukov, I. N. Trapeznikova, and N. Nazarov
Full Text: PDF (51 kB)
Variation of the parameters and composition of thin films of porous silicon as a result of oxidation: ellipsometric studies
E. V. Astrova, V. B. Voronkov, A. D. Remenyuk, V. B. Shuman, and V. A. Tolmachev
Full Text: PDF (102 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.