Semiconductors V. 34, I. 09

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2000-09
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en_US
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Semiconductors
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Semiconductors -- September 2000 Volume 34, Issue 9, pp. 983-1102 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Long-Range Effects of Ion Irradiation, Chemical Etching, and Mechanical Grinding on Relaxation of a Solid Solution of Iron in Gallium Phosphide E. S. Demidov, A. B. Gromoglasova, and V. V. Karzanov pp. 983-988 Full Text: PDF (80 kB) Oxygen-Containing Radiation Defects in Si1 – xGex Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, V. I. Yashnik, N. V. Abrosimov, W. Schröder, and M. Höhne pp. 989-993 Full Text: PDF (76 kB) Specific Features of the Behavior of Oxygen in Sn-Doped Silicon Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, and V. I. Yashnik pp. 994-997 Full Text: PDF (58 kB) Early Stages of Oxygen Precipitation in Silicon: The Effect of Hydrogen V. P. Markevich, L. I. Murin, J. L. Lindström, and M. Suezawa pp. 998-1003 Full Text: PDF (89 kB) Generation of Bulk Defects in Some Semiconductors by Laser Radiation in the Transparency Region of the Crystal S. V. Plyatsko pp. 1004-1010 Full Text: PDF (88 kB) Electron Mobility and Electron Scattering by Polar Optical Phonons in Heterostructure Quantum Wells J. Pozela, K. Pozela, and V. Juciene pp. 1011-1015 Full Text: PDF (66 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovskii, N. S. Savkina, and A. M. Strel'chuk pp. 1016-1020 Full Text: PDF (70 kB) Breakdown of Shallow-Level Donors in Si and Ge on the Insulating Side of a Strain-Induced Metal–Insulator Transition S. I. Budzulyak, E. F. Venger, Yu. P. Dotsenko, V. N. Ermakov, V. V. Kolomoets, V. F. Machulin, and L. I. Panasyuk pp. 1021-1023 Full Text: PDF (44 kB) Mechanism of High Radiation Stability of Electrical Parameters of SmS Thin Films L. N. Vasil'ev, V. V. Kaminskii, S. M. Solov'ev, and N. V. Sharenkova pp. 1024-1026 Full Text: PDF (47 kB) Influence of Erbium Ion Implantation Dose on Characteristics of (111) Si:(Er, O) Light-Emitting Diodes Operating in p–n-Junction Breakdown Mode N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev pp. 1027-1030 Full Text: PDF (79 kB) Optical Bistability and Instability in a Semiconductor in the Case Where the Relaxation Time of Free Charge Carriers and Their Equilibrium Concentration are Temperature-Dependent O. S. Bondarenko, T. M. Lysak, and V. A. Trofimov pp. 1031-1044 Full Text: PDF (154 kB) Generalized Multilayer Model for the Quantitative Analysis of the Electromodulation Components of the Electroreflectance and Photoreflectance Spectra of Semiconductors in the Region of the E0 Fundamental Transition R. V. Kuz'menko, A. V. Ganzha, É. P. Domashevskaya, V. Kircher, and S. Hildebrandt pp. 1045-1051 Full Text: PDF (88 kB) Thermal EMF in a Bipolar Semiconductor with Phonon Drag of Carriers A. Konin and R. Raguotis pp. 1052-1053 Full Text: PDF (25 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation I. V. Antonova, V. F. Stas', V. P. Popov, V. I. Obodnikov, and A. K. Gutakovskii pp. 1054-1057 Full Text: PDF (186 kB) Fabrication and Photoelectric Properties of Oxide/CdTe Structures G. A. Il'chuk, V. I. Ivanov-Omskii, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, and N. A. Ukrainets pp. 1058-1061 Full Text: PDF (57 kB) The Transient Photomagnetic Effect in Multilayer Structures with p–n Junctions V. N. Agarev and V. I. Stafeev pp. 1062-1063 Full Text: PDF (25 kB) Photovoltaic Effect in a-Si:H/n-InSe Heterostructures R. N. Bekimbetov, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 1064-1067 Full Text: PDF (54 kB) LOW-DIMENSIONAL SYSTEMS Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 1068-1072 Full Text: PDF (172 kB) Diagnostics of the Hot-Hole Distribution Function in Quantum Wells in a Strong Electric Field V. Ya. Aleshkin, D. M. Gaponova, V. I. Gavrilenko, Z. F. Krasil'nik, D. G. Revin, B. N. Zvonkov, and E. A. Uskova pp. 1073-1078 Full Text: PDF (93 kB) Size-Quantization Stark Effect in Quasi-Zero-Dimensional Semiconductor Structures S. I. Pokutnii pp. 1079-1084 Full Text: PDF (76 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Nanostructured a-Si:H Films Obtained by Silane Decomposition in a Magnetron Chamber O. A. Golikova, M. M. Kazanin, A. N. Kuznetsov, and E. V. Bogdanova pp. 1085-1089 Full Text: PDF (74 kB) On the Mechanism of Porous Silicon Formation D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli pp. 1090-1093 Full Text: PDF (46 kB) PHYSICS OF SEMICONDUCTOR DEVICES Elemental Composition and Electrical Properties of (a-C:H):Cu Films Prepared by Magnetron Sputtering T. K. Zvonareva, V. M. Lebedev, T. A. Polyanskaya, L. V. Sharonova, and V. I. Ivanov-Omskii pp. 1094-1099 Full Text: PDF (87 kB) Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p–n-Junction Plane A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, V. V. Sherstnev, and Yu. P. Yakovlev pp. 1100-1102 Full Text: PDF (43 kB)
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