Semiconductors V. 32, I. 03

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Issue Date
1998-03
Authors
Publisher
MAIK “Nauka/Interperiodica”.
Keywords
Semiconductors
Abstract
Description
Semiconductors -- March 1998 Volume 32, Issue 3, pp. 231-342 Growth characteristics and physical properties of PbTe/BaF2 prepared under nonequilibrium conditions S. V. Plyatsko Full Text: PDF (83 kB) On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons V. P. Klad'ko and S. V. Plyatsko Full Text: PDF (61 kB) On the mechanisms of long-term relaxation of the conductivity in compensated Si and Si as a result of irradiation M. S. Yunusov, M. Karimov, and B. L. Oksengendler Full Text: PDF (92 kB) Tin telluride based thermoelectrical alloys V. P. Vedeneev, S. P. Krivoruchko, and E. P. Sabo Full Text: PDF (99 kB) Lock-in-phase analysis of n-GaAs photoreflectance spectra A. V. Gansha, R. V. Kus'menko, W. Kircher, J. Schreiber, and S. Hildebrandt Full Text: PDF (114 kB) Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence T. I. Voronina, B. E. Dzhurtanov, T. S. Lagunova, M. A. Sipovskaya, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (115 kB) Low-frequency noise in n-GaN N. V. D'yakonova, M. E. Levinshtein, S. Contreras, W. Knap, B. Beaumont, and P. Gibart Full Text: PDF (102 kB) Equation of state of an electron gas and theory of the thermal voltage in a quantizing magnetic field B. M. Askerov, M. M. Machmudov, and Kh. A. Gasanov Full Text: PDF (45 kB) Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity A. N. Kabaldin, V. B. Neimash, V. M. Tsmots', and V. S. Shtym Full Text: PDF (79 kB) Role of light fluctuations in the appearance of the bistability of the photocarrier distribution Yu. V. Gudyma and D. D. Nikirsa Full Text: PDF (82 kB) Laser-modulated epitaxy of lead telluride S. V. Plyatsko Full Text: PDF (76 kB) Optical properties of crystals of the solid solutions (InSb)1 – x(CdTe)x V. A. Brodovoi, N. G. Vyalyi, and L. M. Knorozok Full Text: PDF (98 kB) Effect of metastable states on the de-excitation of excitons in n-GaAs V. V. Krivolapchuk and N. K. Poletaev Full Text: PDF (75 kB) Transport phenomena in the solid solution (Pb0.78Sn0.22)0.97In0.03Te in the hopping conduction region S. A. Nemov, Yu. I. Ravich, V. I. Proshin, and T. G. Abaidulina Full Text: PDF (88 kB) Local neutrality and pinning of the chemical potential in III–V solid solutions: interfaces and radiation effects V. N. Brudnyi and S. N. Grinyev Full Text: PDF (81 kB) Two- and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals V. A. Pogrebnyak, D. D. Khalameida, V. M. Yakovenko, and I. M. Rarenko Full Text: PDF (223 kB) Preparation and photosensitivity of heterostructures based on anodized silicon carbide A. A. Lebedev, A. A. Lebedev, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (62 kB) Properties of periodic alpha-Si:H/a-SiNx:H structures obtained by nitridization of amorphous-silicon layers D. I. Bilenko, O. Ya. Belobrovaya, Yu. N. Galishnikova, É. A. Zharkova, N. P. Kazanova, O. Yu. Koldobanova, and E. I. Khasina Full Text: PDF (99 kB) Ionization of impurity centers in a semiconductor quantum superlattice by nonlinear electromagnetic waves S. V. Kryuchkov and K. A. Popov Full Text: PDF (103 kB) Harmonics generation in quantum-size structures in a strong electromagnetic field V. V. Kapaev and A. E. Tyurin Full Text: PDF (128 kB) Effect of the charge state of defects on the light-induced kinetics of the photoconductivity of amorphous hydrated silicon O. A. Golikova Full Text: PDF (92 kB) Effect of ion irradiation of amorphous-silicon films on their crystallization N. V. Bakhtina, A. I. Mashin, A. P. Pavlov, and E. A. Pitirimova Full Text: PDF (66 kB) Photosensitivity of porous silicon–layered III–VI semiconductors heterostructures A. A. Lebedev, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (51 kB) Magnetic-resonance spectroscopy of porous quantum-size structures A. I. Mamykin, V. A. Moshnikov, and A. Yu. Il'in Full Text: PDF (61 kB) Properties of p+–n structures with a buried layer of radiation-induced defects A. M. Ivanov, N. B. Strokan, and V. B. Shuman Full Text: PDF (153 kB) Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination S. V. Zaitsev and A. M. Georgievskii Full Text: PDF (56 kB) Current-voltage characteristics of GaN and AlGaN p–i–n diodes N. I. Kuznetsov and K. G. Irvine Full Text: PDF (90 kB) Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (74 kB)
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