Semiconductors V. 32, I. 11

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Semiconductors -- November 1998 Volume 32, Issue 11, pp. 1141-1256 REVIEW Chalcogenide passivation of III–V semiconductor surfaces V. N. Bessolov and M. V. Lebedev Full Text: PDF (215 kB) ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Scanning electron microscopy of long-wavelength laser structures V. A. Solov'ev, M. P. Mikhailova, K. D. Moiseev, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (85 kB) Formation of Se2 quasimolecules in selenium-doped silicon A. A. Taskin and E. G. Tishkovskii Full Text: PDF (127 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Experimental study of the transverse Ettingshausen–Nernst effect and thermoelectric power in the presence of a large temperature gradient M. M. Gadzhialiev and V. A. Elizarov Full Text: PDF (68 kB) Nonlinear waves of interacting charge carriers in semiconductors V. E. Stepanov Full Text: PDF (67 kB) The magnetoplasma effect in single crystals of antimony at T >= 80 K A. A. Zaitsev, K. G. Ivanov, and V. M. Grabov Full Text: PDF (64 kB) Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers V. G. Mokerov, G. B. Galiev, Yu. V. Slepnev, and Yu. V. Khabarov Full Text: PDF (117 kB) Effect of electron-phonon energy exchange on thermal wave propagation in semiconductors Yu. G. Gurevich, G. González de la Cruz, G. N. Logvinov, and M. N. Kasyanchuk Full Text: PDF (132 kB) Nature of the donor action of Gd impurity in crystals of lead and tin telluride D. M. Zayachuk and O. A. Dobryanskii Full Text: PDF (49 kB) Effect of laser-induced defects on luminescence in InP crystals F. B. Baimbetov and N. G. Dzhumamukhambetov Full Text: PDF (54 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Study of the dynamical characteristics of an insulator–semiconductor interface Y. G. Fedorenko, A. M. Sverdlova, and A. Malinin Full Text: PDF (124 kB) Effect of hydrogenation on the properties of metal–GaAs Schottky barrier contacts V. G. Bozhkov, V. A. Kagadei, and N. A. Torkhov Full Text: PDF (93 kB) Electrical characteristics of silicon–rare-earth fluoride layered switching structures V. A. Rozhkov and M. B. Shalimova Full Text: PDF (94 kB) LOW-DIMENSIONAL SYSTEMS The spectrum of real-space indirect magnetoexcitons N. E. Kaputkina and Yu. E. Lozovik Full Text: PDF (195 kB) Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra G. F. Karavaev and A. A. Voronkov Full Text: PDF (154 kB) Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions G. A. Kachurin, A. F. Leier, K. S. Zhuravlev, I. E. Tyschenko, A. K. Gutakovskii, V. A. Volodin, W. Skorupa, and R. A. Yankov Full Text: PDF (829 kB) Effect of size dispersion on the optical absorption of an ensemble of semiconductor quantum dots M. I. Vasilevskii, E. I. Akinkina, A. M. de Paula, and E. V. Anda Full Text: PDF (121 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films V. Kh. Kudoyarova, A. N. Kuznetsov, E. I. Terukov, O. B. Gusev, Yu. A. Kudryavtsev, B. Ya. Ber, G. M. Gusinskii, W. Fuhs, G. Weiser, and H. Kuehne Full Text: PDF (106 kB) Influence of the deposition and annealing conditions on the optical properties of amorphous silicon A. I. Mashin, A. V. Ershov, and D. A. Khokhlov Full Text: PDF (83 kB) PHYSICS OF SEMICONDUCTOR DEVICES Influence of internal mechanical stresses on the characteristics of GaAs light-emitting diodes V. G. Sidorov, D. V. Sidorov, and V. I. Sokolov Full Text: PDF (98 kB) Appearance of negative resistance in p – n junction structures in a microwave field D. A. Usanov, A. V. Skripal', and N. V. Ugryumova Full Text: PDF (96 kB) OBITUARIES In memory of Yuli[i-breve] Ivanovich Ukhanov Full Text: PDF (93 kB) In memory of Serge[i-breve] Ivanovich Radautsan Full Text: PDF (128 kB) ERRATA Erratum: Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra [Semiconductors 32, 423–427 (April 1998)] P. G. Eliseev and I. V. Akimova Full Text: PDF (31 kB) Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)] N. I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon Full Text: PDF (19 kB)
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