Semiconductors V. 34, I. 02
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Authors
Issue Date
2000-02
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- February 2000
Volume 34, Issue 2, pp. 123-249
REVIEW
Modification of Semiconductors with Proton Beams. A Review
V. V. Kozlovskii, V. A. Kozlov, and V. N. Lomasov
pp. 123-140 Full Text: PDF (203 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Electronic Properties of Variably Charged Defects in Crystalline Semiconductors
A. N. Kraichinskii, L. I. Shpinar, and I. I. Yaskovets
pp. 141-145 Full Text: PDF (71 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Properties of InP Irradiated with Fast Neutrons in a Nuclear Reactor
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 146-149 Full Text: PDF (55 kB)
Electrical Properties of Transmutation-Doped Indium Phosphide
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
pp. 150-154 Full Text: PDF (67 kB)
Thermal Acceptors in Irradiated Silicon
V. F. Stas', I. V. Antonova, E. P. Neustroev, V. P. Popov, and L. S. Smirnov
pp. 155-160 Full Text: PDF (77 kB)
Influence of Au and Pt on the Concentration Profile of Mn in Si
G. S. Kulikov and Sh. A. Yusupova
pp. 161-162 Full Text: PDF (28 kB)
Variation in Resistance of a Nitrogen-Enriched Silicon Layer as a Result of the Long-Range Effect of Ion Implantation
E. S. Demidov, V. V. Karzanov, and K. A. Markov
pp. 163-165 Full Text: PDF (46 kB)
Contribution of the Electron Subsystem of Crystal into Reactions between Multicharge Centers in Semiconductors
N. I. Boyarkina and A. V. Vasil'ev
pp. 166-170 Full Text: PDF (61 kB)
Control of the Excitation Conditions and the Parameters of Self-Sustained Oscillations of Current in Compensated Silicon Doped with Manganese
M. K. Bakhadyrkhanov, Kh. Azimkhuzhaev, N. F. Zikrillaev, A. B. Sabdullaev, and É. Arzikulov
pp. 171-173 Full Text: PDF (44 kB)
SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Reconstruction Transition (4 × 2) [long right-arrow] (2 × 4) on the (001) Surfaces of InAs and GaAs
Yu. G. Galitsyn, S. P. Moshchenko, and A. S. Suranov
pp. 174-180 Full Text: PDF (131 kB)
Physicochemical Properties of the Surface and Near-Surface Region of Epitaxial n-GaAs Layers Modified by Atomic Hydrogen
N. A. Torkhov and S. V. Eremeev
pp. 181-188 Full Text: PDF (342 kB)
Magnetotransport in a Semimetal Channel in p-Ga1 – xInxAsySb1 – y / p-InAs Heterostructures with Various Compositions of the Solid Solution
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev
pp. 189-194 Full Text: PDF (84 kB)
LOW-DIMENSIONAL SYSTEMS
Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
M. M. Sobolev, I. V. Kochnev, V. M. Lantratov, N. A. Bert, N. A. Cherkashin, N. N. Ledentsov, and D. A. Bedarev
pp. 195-204 Full Text: PDF (237 kB)
On the Constriction of the Hall Current in the Corbino Disk under Quantum Hall Effect Conditions
V. B. Shikin and Yu. V. Shikina
pp. 205-212 Full Text: PDF (90 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Effect of Ultrafast Low-Temperature Doping of Vitreous As–Se Films with Copper, Silver, Gold, and Chromium (The Khan Effect)
M. A. Korzhuev
pp. 213-216 Full Text: PDF (70 kB)
Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper
A. O. Golubok, O. M. Gorbenko, T. K. Zvonareva, S. A. Masalov, V. V. Rozanov, S. G. Yastrebov, and V. I. Ivanov-Omskii
pp. 217-220 Full Text: PDF (147 kB)
Mechanisms of Transport and Injection of Carriers into a Porous Silicon: Electroluminescence in Electrolytes
D. N. Goryachev, G. Polisskii, and O. M. Sreseli
pp. 221-227 Full Text: PDF (109 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Quantum-Mechanical Features of the Field Effect in Heterotransistors with Modulation- and delta-Doped Regions
V. A. Gergel', V. G. Mokerov, and M. V. Timofeev
pp. 228-232 Full Text: PDF (64 kB)
Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors
V. A. Gergel', V. G. Mokerov, M. V. Timofeev, and Yu. V. Fedorov
pp. 233-236 Full Text: PDF (50 kB)
Single-Mode InAsSb/InAsSbP Laser (lambda [approximate] 3.2 µm) Tunable over 100 Å
A. P. Danilova, A. N. Imenkov, N. M. Kolchanova, S. Civis, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 237-242 Full Text: PDF (87 kB)
6H-SiC Epilayers as Nuclear Particle Detectors
A. A. Lebedev, N. S. Savkina, A. M. Ivanov, N. B. Strokan, and D. V. Davydov
pp. 243-249 Full Text: PDF (88 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.