Semiconductors V. 35, I. 09

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MAIK “Nauka/Interperiodica”.
Semiconductors -- September 2001 Volume 35, Issue 9, pp. 981-1116 THIS ISSUE IS DEDICATED TO THE MEMORY OF ANATOLI VASIL'EVICH RZHANOV (1920–2000) A Scientist, a Mentor, a Soldier I. G. Neizvestnyi pp. 981-984 Full Text: PDF (92 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Atomic Processes in Semiconductor Crystals L. S. Smirnov pp. 985-987 Full Text: PDF (30 kB) Investigation of Ge Film Growth on the Si(100) Surface by Recording Diffractometry A. I. Nikiforov, V. A. Cherepanov, and O. P. Pchelyakov pp. 988-991 Full Text: PDF (154 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS A Study of Galvanomagnetic Phenomena in MBE-Grown n-CdxHg1 – xTe Films V. S. Varavin, A. F. Kravchenko, and Yu. G. Sidorov pp. 992-996 Full Text: PDF (65 kB) Numerical Simulation of Intrinsic Defects in SiO2 and Si3N4 V. A. Gritsenko, Yu. N. Novikov, A. V. Shaposhnikov, and Yu. N. Morokov pp. 997-1005 Full Text: PDF (271 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Oxidation of Semiconductors and the Constitution of Interfaces S. M. Repinskii pp. 1006-1017 Full Text: PDF (159 kB) Diffusion of Cu over a Clean Si(111) Surface A. E. Dolbak, R. A. Zhachuk, and B. Z. Olshanetsky pp. 1018-1021 Full Text: PDF (50 kB) The Simulation of Epitaxy, Sublimation, and Annealing Processes in a 3D Silicon Surface Layer A. V. Zverev, I. G. Neizvestnyi, N. L. Shvarts, and Z. Sh. Yanovitskaya pp. 1022-1029 Full Text: PDF (242 kB) Properties of Silicon-on-Insulator Structures and Devices V. P. Popov, A. I. Antonova, A. A. Frantsuzov, L. N. Safronov, G. N. Feofanov, O. V. Naumova, and D. V. Kilanov pp. 1030-1037 Full Text: PDF (198 kB) In situ Study of the Interaction of Oxygen with the Si(111) Surface by Ultrahigh-Vacuum Reflection Electron Microscopy S. S. Kosolobov, A. L. Aseev, and A. V. Latyshev pp. 1038-1044 Full Text: PDF (439 kB) Molecular-Beam Epitaxy of Mercury–Cadmium–Telluride Solid Solutions on Alternative Substrates Yu. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, N. N. Mikhailov, M. V. Yakushev, and I. V. Sabinina pp. 1045-1053 Full Text: PDF (103 kB) Epitaxial Growth, Electronic Properties, and Photocathode Applications of Strained Pseudomorphic InGaAsP/GaAs Layers V. L. Alperovich, Yu. B. Bolkhovityanov, S. I. Chikichev, A. G. Paulish, A. S. Terekhov, and A. S. Yaroshevich pp. 1054-1062 Full Text: PDF (123 kB) Electronic Properties of InAs-Based Metal–Insulator–Semiconductor (MIS) Structures G. L. Kuryshev, A. P. Kovchavtsev, and N. A. Valisheva pp. 1063-1071 Full Text: PDF (131 kB) Recombination of Point Defects and Their Interaction with the Surface in the Course of the Clusterization of these Defects in Si L. I. Fedina pp. 1072-1080 Full Text: PDF (420 kB) LOW-DIMENSIONAL SYSTEMS Spin Response of 2D Electrons to a Lateral Electric Field L. I. Magarill, A. V. Chaplik, and M. V. Éntin pp. 1081-1087 Full Text: PDF (276 kB) Germanium Quantum Dots in an Unstrained GaAs/ZnSe/Ge/ZnSe Heterosystem I. G. Neizvestnyi, S. P. Suprun, A. B. Talochkin, V. N. Shumsky, and A. V. Efanov pp. 1088-1094 Full Text: PDF (258 kB) Type-II Ge/Si Quantum Dots A. V. Dvurechenskii and A. I. Yakimov pp. 1095-1105 Full Text: PDF (137 kB) PHYSICS OF SEMICONDUCTOR DEVICES Switching Characteristics of Electron-Irradiated MOS-Controlled Thyristors E. V. Chernyavskii, V. P. Popov, Yu. S. Pakhmutov, Yu. I. Krasnikov, and L. N. Safronov pp. 1106-1109 Full Text: PDF (154 kB) Arrays of 128 × 128 Photodetectors Based on HgCdTe Layers and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasil'ev, and V. V. Shashkin pp. 1110-1116 Full Text: PDF (252 kB)