Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion
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Authors
Zhang, Xiang
Mitin, Vladimir
Sergeev, Andrei
Sablon, Kimberly A.
Yakimov, Michael
Oktyabrsky, Serge
Choi, Jung-ki
Strasser, Gottfried
Issue Date
2017
Type
Presentation
Language
Keywords
nanotechnology , IR sensing , photovoltaic conversion , quantum well (QW) , quantum dot (QD) , photocurrent , dark current , semiconductors
Alternative Title
Journal of Physics: Conference Series
Abstract
Advanced selective doping provides effective tool for nanoscale engineering of potential barriers and photoelectron processes in quantum well (QW) and quantum dot (QD) optoelectronic nanomaterials for IR sensing and wide band photovoltaic conversion. Photoelectron kinetics and device characteristics are investigated theoretically and experimentally. Asymmetrical doping of QWs is employed in a double QW structure for tuning electron transitions in QWs by voltage bias. These QW devices demonstrate bias-tunable multicolor detection and capability of remote temperature sensing. The QD structures with bipolar doping are proposed to independently control photocarrier lifetime (photocurrent) and dark current. The bipolar doping allows us to increase the height of nanoscale potential barriers around QDs without changing the electron population in QDs, which determines dark current. The QD devices with bipolar doping demonstrate significant enhancement of photocurrent, while dark current is close to that in corresponding reference devices with unipolar doping.
Description
Citation
Zhang, X., Mitin, V., Sergeev, A., Sablon, K., Yakimov, M., Oktyabrsky, S., . . . Strasser, G. (2017). Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion. Journal of Physics: Conference Series, 906(1). doi:10.1088/1742-6596/906/1/012026
Publisher
IOP Publishing
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
1742-6596