Semiconductors V. 32, I. 04

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Semiconductors -- April 1998 Volume 32, Issue 4, pp. 343-456 Quantum dot heterostructures: fabrication, properties, lasers (Review) N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin., P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (1558 kB) Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra V. A. Novikov and V. V. Peshev Full Text: PDF (133 kB) Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon implanted with boron ions V. I. Obodnikov and E. G. Tishkovskii Full Text: PDF (71 kB) Observation of low-temperature diffusion of aluminum impurity atoms in hydrogen-implanted silicon Yu. V. Gorelkinskii, B. N. Mukashev, and Kh. A. Abdullin Full Text: PDF (161 kB) Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III–V compounds (AlSb, GaSb, InSb, GaAs, InAs) V. M. Glazov and O. D. Shchelikov Full Text: PDF (76 kB) Optical absorption and photosensitivity of CuInxGa1 – xSe2 thin film structures V. Yu. Rud', Yu. V. Rud', I. V. Bodnar', and V. F. Gremenok Full Text: PDF (104 kB) On trapping of minority current carriers in n-type CdxHg1 – xTe at low temperatures S. G. Gasan-zade and G. A. Shepel'skii Full Text: PDF (93 kB) Short-wavelength photoluminescence of SiO2 layers implanted with high doses of Si+, Ge+, and Ar+ ions G. A. Kachurin, L. Rebohle, W. Skorupa, R. A. Yankov, I. E. Tyschenko, H. Froeb, T. Boehme, and K. Leo Full Text: PDF (102 kB) Characteristic features of the defect formation process in Pb1 – xSnxSe(x <= 0.06) A. N. Veis and N. A. Suvorova Full Text: PDF (111 kB) Energy spectrum of acceptors in the semimagnetic semiconductors p-Hg1 – xMnxTe in the spin-glass region E. I. Georgitsé, V. I. Ivanov-Omskii, and D. I. Tsypishka Full Text: PDF (80 kB) Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field É. M. Kazaryan and K. A. Mkhoyan Full Text: PDF (67 kB) Recombination of donor nickel excitons in the solid solutions ZnSe1 – ySy:Ni V. I. Sokolov and O. V. Dolzhenkov Full Text: PDF (93 kB) Photosensitivity of thin-film structures based on laser-deposited CuIn(TexSe1 – x)2 layers I. V. Bodnar', V. F. Gremenok, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (71 kB) Electric and photoelectric properties of n-GaxIn1 – xN/p-Si anisotypic heterojunctions S. E. Aleksandrov, V. A. Zykov, T. A. Gavrikova, and D. M. Krasovitskii Full Text: PDF (105 kB) Intraband absorption of light in quantum wells induced by electron-electron collisions G. G. Zegrya and V. E. Perlin Full Text: PDF (151 kB) Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra P. G. Eliseev and I. V. Akimova Full Text: PDF (102 kB) Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function P. G. Eliseev and I. V. Akimova Full Text: PDF (108 kB) Staebler–Wronski effect as a function of the Fermi level position and structure of nondoped, amorphous, hydrated silicon O. A. Golikova, M. M. Kazanin, and V. Kh. Kudoyarova Full Text: PDF (99 kB) Study of optical absorption in thin films of a-As2Se3 by photocapacitance spectroscopy I. A. Vasil'ev and S. D. Shutov Full Text: PDF (82 kB) Effect of thermal annealing and chemical treatment on the photoluminescence of porous silicon E. A. Shelonin, M. V. Naidenkova, A. M. Khort, A. G. Yakovenko, A. A. Gvelesiani, and I. E. Maronchuk Full Text: PDF (49 kB) Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate A. S. Kyuregyan Full Text: PDF (143 kB) Amplification of electromagnetic waves at odd harmonics of the cyclotron resonance of heavy holes with negative effective masses in semiconducting diamond V. A. Chuenkov Full Text: PDF (96 kB) Yaroslav Evgen'evich Pokrovski[i-breve] (On his 70th birthday) Full Text: PDF (118 kB)
MAIK “Nauka/Interperiodica”.
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