Semiconductors V. 39, I. 08
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Authors
Issue Date
2005-08
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- August 2005
Volume 39, Issue 8, pp. 861-988
REVIEW
Power Bipolar Devices Based on Silicon Carbide
P. A. Ivanov, M. E. Levinshtein, T. T. Mnatsakanov, J. W. Palmour, and A. K. Agarwal
pp. 861-877 Full Text: PDF (199 kB)
CONFERENCE. A REVIEW
IV International Conference on Amorphous and Microcrystalline Semiconductors (July 5–7, 2004)
E. I. Terukov
pp. 878-880 Full Text: PDF (31 kB)
CONFERENCE. ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Fast Exothermic Processes in Porous Silicon
S. K. Lazarouk, A. V. Dolbik, P. V. Jaguiro, V. A. Labunov, and V. E. Borisenko
pp. 881-883 Full Text: PDF (50 kB)
CONFERENCE. ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol
V. E. Ogluzdin
pp. 884-890 Full Text: PDF (66 kB)
Photoluminescence of Erbium-Doped Aluminum Oxide Films with Embedded Silicon Nanoparticles
S. K. Lazarouk, A. V. Mudryi, A. V. Ivanyukovich, A. A. Leshok, D. N. Unuchek, and V. A. Labunov
pp. 891-893 Full Text: PDF (56 kB)
Nanostructuring of Crystalline Grains of Natural Diamond Using Ionizing Radiation
N. A. Poklonski, T. M. Lapchuk, N. I. Gorbachuk, V. A. Nikolaenko, and I. V. Bachuchin
pp. 894-897 Full Text: PDF (111 kB)
Permittivity Spectra and Characteristic Energy Losses of Electrons in ZnO at 100 K
V. Val. Sobolev, V. V. Sobolev, and E. I. Terukov
pp. 898-903 Full Text: PDF (70 kB)
CONFERENCE. SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Characterization of an a-Si:H/c-Si Interface by Admittance Spectroscopy
A. S. Gudovskikh, J.-P. Kleider, and E. I. Terukov
pp. 904-909 Full Text: PDF (92 kB)
CONFERENCE. LOW-DIMENSIONAL SYSTEMS
Coulomb Blockade of the Conductivity of SiOx Films Due to One-Electron Charging of a Silicon Quantum Dot in a Chain of Electronic States
M. D. Efremov, G. N. Kamaev, V. A. Volodin, S. A. Arzhannikova, G. A. Kachurin, S. G. Cherkova, A. V. Kretinin, V. V. Malyutina-Bronskaya, and D. V. Marin
pp. 910-916 Full Text: PDF (93 kB)
CONFERENCE. AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Processes of Growth of Disordered Semiconductors in the Context of Self-Organiziation Theory
S. P. Vikhrov, N. V. Bodyagin, T. G. Larina, and S. M. Mursalov
pp. 917-923 Full Text: PDF (224 kB)
Photoinduced Relaxation of Metastable States in (a-Si:H):B
N. N. Ormont, I. A. Kurova, and G. V. Prokof'ev
pp. 924-927 Full Text: PDF (55 kB)
The Mechanisms of Current Transport and Properties of a-SiC:H/c-Si Heterostructures
A. A. Sherchenkov, B. G. Budagyan, and A. V. Mazurov
pp. 928-933 Full Text: PDF (98 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Raman Spectroscopy Study of the Carbon Structure of a-C:(H, Cu) and a-C:(H, Co) Composite Films
É. A. Smorgonskaya and V. I. Ivanov-Omskii
pp. 934-940 Full Text: PDF (103 kB)
CONFERENCE. AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Transport of Protons in Amorphous Hydrogenated Carbon
V. I. Ivanov-Omskii and S. G. Yastrebov
pp. 941-943 Full Text: PDF (39 kB)
The Effect of Erbium and Oxygen on the Photoluminescence Intensity of Erbium and the Composition of a-SiOx:(H, Er, O) Films Deposited by DC Magnetron Sputtering
Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova
pp. 944-950 Full Text: PDF (112 kB)
Structural Transformations and Optical Properties of As2S3 Chalcogenide Glasses
I. V. Fekeshgazi, K. V. Mai, N. I. Matelesko, V. M. Mitsa, and E. I. Borkach
pp. 951-954 Full Text: PDF (49 kB)
Electron Microscopy Study of a Chalcogenide-Based Polycrystalline Condensate Microstructure: The Effect of Composition and Thickness on Internal Lattice Bending
V. Yu. Kolosov, L. M. Veretennikov, Yu. B. Startseva, and C. L. Schvamm
pp. 955-959 Full Text: PDF (548 kB)
The Boson Peak in Raman Spectra of AsxS1 – x Glasses
D. Arsova, Y. C. Boulmetis, C. Raptis, V. Pamukchieva, and E. Skordeva
pp. 960-962 Full Text: PDF (44 kB)
Reversible Photoinduced Changes in the Spectrum of Localized States in AsSe Films
L. P. Kazakova, K. D. Tsendin, M. A. Tagirdzhanov, and N. S. Averkiev
pp. 963-966 Full Text: PDF (50 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Causes of the Stability of Three-Bilayer Islands and Steps on a Si (111) Surface
A. V. Zverev, I. G. Neizvestny, I. A. Reizvikh, K. N. Romanyuk, S. A. Teys, N. L. Shwartz, and Z. Sh. Yanovitskaya
pp. 967-977 Full Text: PDF (378 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Properties of Amorphous Arsenic Chalcogenide Films Modified by Rare-Earth Complexes
S. A. Kozyukhin, A. R. Fairushin, and É. N. Voronkov
pp. 978-982 Full Text: PDF (72 kB)
Interaction of Fullerene with Single-Crystal Silicon
O. M. Sreseli, I. B. Zakharova, S. P. Vul', T. L. Makarova, L. V. Sharonova, L. V. Belyakov, and D. N. Goryachev
pp. 983-986 Full Text: PDF (51 kB)
PERSONALIA
In Memory of Anatolii Robertovich Regel' (1915–1989)
pp. 987-988 Full Text: PDF (59 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.