Semiconductors V. 33, I. 07
Journal Title
Loading...
Issue Date
1999-07
Authors
Publisher
MAIK “Nauka/Interperiodica”.
Keywords
Semiconductors
Abstract
Description
Semiconductors -- July 1999
Volume 33, Issue 7, pp. 707-819
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Influence of native defects on polytypism in SiC
A. A. Lebedev
Full Text: PDF (34 kB)
Antistructural defects in PbTe-type semiconductors
V. F. Masterov, S. I. Bondarevskii, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin
Full Text: PDF (40 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical properties of nuclear-doped indium antimonide
N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev
Full Text: PDF (50 kB)
Study of the polarization photoluminescence of thick epitaxial GaN layers
Yu. V. Zhilyaev, V. V. Krivolapchuk, and I. N. Safronov
Full Text: PDF (44 kB)
Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it
T. I. Voronina, T. S. Lagunova, K. D. Moiseev, A. E. Rozov, M. A. Sipovskaya, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (79 kB)
Hubbard energy of two-electron tin centers in PbS1 – zTez solid solutions
V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, and N. P. Seregin
Full Text: PDF (35 kB)
Investigation of MOVPE-grown GaN layers doped with As atoms
A. F. Tsatsul'nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, V. V. Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alfërov, and A. Hoffmann
Full Text: PDF (46 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Photolectric effects in silicon switching structures utilizing rare-earth fluorides
V. A. Rozhkov and M. B. Shalimova
Full Text: PDF (66 kB)
Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures
V. Yu. Rud' and Yu. V. Rud'
Full Text: PDF (57 kB)
Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions
I. V. Bodnar', V. F. Gremenok, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (54 kB)
Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer
V. I. Kozlovskii,, A. B. Krysa, Yu. G. Sadof'ev, and A. G. Tur'yanskii
Full Text: PDF (236 kB)
Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light
B. I. Reznikov
Full Text: PDF (102 kB)
Heterojunctions utilizing CuInxGa1 – xTe2 thin films
V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, V. F. Gremenok, I. A. Viktorov, I. V. Bodnar', and D. D. Krivolap
Full Text: PDF (48 kB)
LOW-DIMENSIONAL SYSTEMS
Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields
É. P. Sinyavskii and S. M. Sokovnich
Full Text: PDF (65 kB)
Polar state of a particle with a degenerate band spectrum in a quantum dot
I. P. Ipatova, A. Yu. Maslov, and O. V. Proshina
Full Text: PDF (85 kB)
Transport and optical properties of tin delta-doped GaAs structures
V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, V. G. Mokerov, A. P. Senichkin, A. S. Bugaev, A. L. Karuzskii, A. V. Perestoronin, R. T. F. van Schaijk, and A. de Visser
Full Text: PDF (118 kB)
Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures
A. M. Georgievskii, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinskii, I. I. Novikov, and P. S. Kop'ev
Full Text: PDF (47 kB)
Electron-beam-induced conductivity in self-organized silicon quantum wells
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin, and A. M. Malyarenko
Full Text: PDF (105 kB)
Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov, D. A. Livshits, Z. N. Sokolova, I. S. Tarasov, and Zh. I. Alferov
Full Text: PDF (225 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Photocapacitance relaxation in amorphous As2Se3 films
I. A. Vasiliev and S. D. Shutov
Full Text: PDF (53 kB)
Controlling the U–-center density in Se–As chalcogenide-glass semiconductors by doping with metals and halogens
L. P. Kazakova and K. D. Tsendin
Full Text: PDF (55 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Theory of photoresistors based on trapezoidal delta-doped superlattices
V. V. Osipov, A. Yu. Selyakov, and M. Foygel
Full Text: PDF (81 kB)
A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p – n structures and Schottky diodes
Yu. A. Goldberg, O. V. Konstantinov, V. M. Lantratov, O. I. Obolensky, T. V. Petelina, E. A. Posse, and M. Z. Shvarts
Full Text: PDF (55 kB)
Fabrication of discrete p – n junctions separated by an insulating layer using direct wafer bonding
E. G. Guk, B. G. Podlaskin, N. A. Tokranova, V. B. Voronkov, and V. A. Kozlov
Full Text: PDF (141 kB)
Polarization selection in VCSELs due to current carrier heating
B. S. Ryvkin and A. M. Georgievskii
Full Text: PDF (116 kB)
DOI
Collections
Content Designation
Archived web content