Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
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Authors
Chidambaram, Thenappan
Veksler, Dmitry
Madisetti, Shailesh
Greene, Andrew
Yakimov, Michael
Tokranov, Vadim
Hill, Richard
Oktyabrsky, Serge
Issue Date
2014
Type
Article
Language
en_US
Keywords
gated Hall method , free carrier density , electron mobility , quantum wells , temperature dependence , electron mobility , Coulomb scattering , electron density , interface/border traps , capacitance-voltage measurement , electrostatic modeling , fast traps , free channel carrier , channel density , carrier mobility
Alternative Title
Abstract
In this work, we are using a gated Hall method for measurement of free carrier density and electron
mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor
channels. At room temperature, mobility over 8000 cm2/Vs is observed at ~1.4 10 12 cm-2.
Temperature dependence of the electron mobility gives the evidence that remote Coulomb
scattering dominates at electron density <2 10 11 cm -2. Spectrum of the interface/border traps is
quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic
modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be
distinguished from free channel carriers just by capacitance-based methods and can be the reason
for significant overestimation of channel density and underestimation of carrier mobility from
transistor measurements.
Description
Citation
Chidambaram, T., Veksler, D., Madisetti, S., Greene, A., Yakimov, M., Tokranov, V., . . . Oktyabrsky, S. (2014). Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method. Applied Physics Letters, 104(13), 1-4. doi:10.1063/1.4870257
Publisher
Applied Physics Letters
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
0003-6951