Semiconductors V. 31, I. 05

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MAIK “Nauka/Interperiodica”.
Semiconductors -- May 1997 Volume 31, Issue 5, pp. 433-542 Threshold effect of local pulsed laser irradiation on the surface state of oxide layers deposited on real germanium surfaces S. V. Vintsents, S. G. Dmitriev, R. A. Zakharov, and G. S. Plotnikov Full Text: PDF (54 kB) Effect of manganese on radiation degradation of the electric and recombination parameters of a silicon single crystal F. M. Talipov Full Text: PDF (40 kB) Faraday rotation angle anisotropy in a Fe-based diluted magnetic semiconductor S. V. Mel'nichuk, O. S. Mel'nichuk, A. I. Savchuk, and D. N. Trifonenko Full Text: PDF (107 kB) Photoelectric and radiation characteristics of silicon solar cells at high illumination levels and elevated temperatures M. Ya. Bakirov Full Text: PDF (65 kB) Distribution of a shallow donor impurity in a p-type CdTe wafer annealed in Cd vapors V. N. Babentsov, Z. K. Vlasenko, A. I. Vlasenko, and A. V. Lyubchenko Full Text: PDF (112 kB) Charge-carrier exclusion in InAs S. S. Bolgov, V. K. Malyutenko, and A. P. Savchenko Full Text: PDF (62 kB) Nature of hole localization centers in sodium-doped lead chalcogenides G. T. Alekseeva, E. A. Gurieva, P. P. Konstantinov, L. V. Prokof'eva, and Yu. I. Ravich Full Text: PDF (86 kB) Effect of fast-neutron irradiation on the photoluminescence of n-type GaAs(Te) crystals K. D. Glinchuk and A. V. Prokhorovich Full Text: PDF (86 kB) On the relaxational characteristics and stability of a Si:H films grown at high temperatures I. A. Kurova, N. N. Ormont, O. A. Golikova, and V. Kh. Kudoyarova Full Text: PDF (71 kB) The properties of low-threshold heterolasers with clusters of quantum dots S. V. Zaitsev, N. Yu. Gordeev, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (167 kB) Deep vacancy levels in (AlAs)1(GaAs)3 superlattices S. N. Grinyaev and G. F. Karavaev Full Text: PDF (348 kB) Infrared absorption in porous silicon obtained in electrolytes containing ethanol A. A. Kopylov and A. N. Kholodilov Full Text: PDF (98 kB) Inelastic electron scattering in strongly doped Bi0.88Sb0.12 S. A. Aliev, A. A. Movsum-zade, and S. S. Ragimov Full Text: PDF (122 kB) Photoelectric effect in GaAs-based surface-barrier structures: Temperature dependence of the short-wavelength quantum efficiency Yu. A. Gol'dberg, O. V. Konstantinov, O. I. Obolenskii, E. A. Posse, and B. V. Tsarenkov Full Text: PDF (101 kB) Contact phenomena in two-dimensional electronic systems V. B. Shikin and N. I. Shikina Full Text: PDF (96 kB) Exchange energy of a free electron in a semiconductor O. V. Konstantinov, O. I. Obolenskii, and B. V. Tsarenkov Full Text: PDF (150 kB) Electron transport under Wannier–Stark localization conditions in silicon carbide polytypes V. I. Sankin and I. A. Stolichnov Full Text: PDF (126 kB) Low-frequency Hall conductance of a semi-infinite two-dimensional system V. B. Shikin Full Text: PDF (63 kB) Electrical properties of the solid solutions p-type GaAs1 – xSbx doped with germanium T. Yu. Allen and T. A. Polyanskaya Full Text: PDF (174 kB) Photoluminescence in porous silicon produced as a result of intense laser excitation E. Shatkovskii and Ya. Vertsinskii Full Text: PDF (75 kB) The Schottky barrier at a junction between a metal and silicon carbide S. Yu. Davydov, A. A. Lebedev, and S. K. Tikhonov Full Text: PDF (95 kB) Polarization anisotropy of optical interband transitions in strained InGaAs/GaAs quantum wires S. A. Gurevich, D. A. Zakheim, and S. A. Solov'ev Full Text: PDF (166 kB) Photoresponse of CdxHg1 – xTe crystals due to composition inhomogeneities I. S. Virt and D. I. Tsyutsyura Full Text: PDF (109 kB) Transient space-charge-limited current in porous silicon L. P. Kazakova, A. A. Lebedev, and É. A. Lebedev Full Text: PDF (59 kB) Effect of transverse pump current nonuniformity and field distribution on the dynamical characteristics of strip injection lasers S. A. Gurevich, G. S. Simin, and M. S. Shatalov Full Text: PDF (103 kB) Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system A. S. Zubrilov, Yu. V. Mel'nik, D. V. Tsvetkov, V. E. Bugrov, A. E. Nikolaev, S. I. Stepanov, and V. A. Dmitriev Full Text: PDF (396 kB) Mechanism of multivalued electrical conductivity anisotropy in double heterostructure wells and superlattices Z. S. Gribnikov Full Text: PDF (119 kB) Positive magnetoresistance in films of the ferromagnetic semiconductor Eu1 – xSmxO V. F. Kabanov and A. M. Sverdlova Full Text: PDF (92 kB) Photoacoustic spectroscopy of porous silicon A. N. Obraztsov, V. Yu. Timoshenko, H. Okushi, and H. Watanabe Full Text: PDF (68 kB) Exciton scattering by concentration fluctuations and projection of the spins of magnetic impurities in quantum wells in semimagnetic semiconductors A. V. Vertsimakha and V. I. Sugakov Full Text: PDF (115 kB) Optical absorption edge and its modification due to the decomposition of cadmium telluride and cadmium sulfide solid solution films A. P. Belyaev, V. P. Rubets, and I. P. Kalinkin Full Text: PDF (62 kB)