Semiconductors V. 34, I. 11
Journal Title
Loading...
Issue Date
2000-11
Authors
Publisher
MAIK “Nauka/Interperiodica”.
Keywords
Semiconductors
Abstract
Description
Semiconductors -- November 2000
Volume 34, Issue 11, pp. 1229-1354
REVIEWS
Silicon–Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties
O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtländer
pp. 1229-1247 Full Text: PDF (436 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped AlxGa1 – xN Epilayers on Sapphire
A. S. Usikov, V. V. Tret'yakov, A. V. Bobyl', R. N. Kyutt, W. V. Lundin, B. V. Pushnyi, and N. M. Shmidt
pp. 1248-1254 Full Text: PDF (164 kB)
Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap
L. S. Vavilova, V. A. Kapitonov, A. V. Murashova, and I. S. Tarasov
pp. 1255-1258 Full Text: PDF (293 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Influence of Heat Treatment on Luminescence of Semi-Insulating Undoped GaAs Crystals
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 1259-1263 Full Text: PDF (70 kB)
Basic Principles of Postgrowth Annealing of CdTe:Cl Ingot to Obtain Semi-Insulating Crystals
O. A. Matveev and A. I. Terent'ev
pp. 1264-1269 Full Text: PDF (81 kB)
A Quasi-Linear Photorefractive Effect in Silicon
A. L. Filatov
pp. 1270-1274 Full Text: PDF (63 kB)
Fabrication and Photoelectronic Properties of ZnTe Single Crystals and Schottky Diodes
G. A. Il'chuk, V. I. Ivanov-Omskii, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, and N. A. Ukrainets
pp. 1275-1280 Full Text: PDF (84 kB)
Quasi-localized States and Resonance Scattering of Particles by Defects in Semiconductor Crystals with Band Spectrum Structure
S. E. Savotchenko
pp. 1281-1286 Full Text: PDF (76 kB)
Magneto-Optical Study of Bismuth at 80–280 K
V. M. Grabov, K. G. Ivanov, and A. A. Zaitsev
pp. 1287-1289 Full Text: PDF (52 kB)
Stimulation of Luminescence in Graded-Gap AlxGa1 – xAs Semiconductors
K. Pozela, R.-A. Bendorius, J. Pozela, and A. Silenas
pp. 1290-1294 Full Text: PDF (72 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photoelectric Properties of Isotype and Anisotype Si/GaN:O Heterojunctions
S. E. Aleksandrov, T. A. Gavrikova, and V. A. Zykov
pp. 1295-1300 Full Text: PDF (90 kB)
Nanorelief of a GaN Surface: the Effect of Sulfide Treatment
V. N. Bessolov, Yu. V. Zhilyaev, E. E. Zavarin, M. E. Kompan, E. V. Konenkova, A. S. Usikov, and V. A. Fedirko
pp. 1301-1304 Full Text: PDF (123 kB)
The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures
V. V. Evstropov, M. Dzhumaeva, Yu. V. Zhilyaev, N. Nazarov, A. A. Sitnikova, and L. M. Fedorov
pp. 1305-1310 Full Text: PDF (161 kB)
LOW-DIMENSIONAL SYSTEMS
Photoresistance of Si/Ge/Si Structures with Germanium Quantum Dots
O. A. Shegai, K. S. Zhuravlev, V. A. Markov, A. I. Nikiforov, and O. P. Pchelyakov
pp. 1311-1315 Full Text: PDF (80 kB)
The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3–1.4 µm
B. V. Volovik, D. S. Sizov, A. F. Tsatsul'nikov, Yu. G. Musikhin, N. N. Ledentsov, V. M. Ustinov, V. A. Egorov, V. N. Petrov, N. K. Polyakov, and G. É. Tsyrlin
pp. 1316-1320 Full Text: PDF (133 kB)
A Nonlinear Theory of Coherent Oscillations in a Resonance-Tunnel Diode in a Wide Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 1321-1326 Full Text: PDF (75 kB)
Optical-Absorption Spectra of PbS/C-Based Fibonacci Superlattices with Phonon-Assisted Transitions
S. F. Musikhin, O. V. Rabizo, V. I. Il'in, A. S. Fedorov, and L. V. Sharonova
pp. 1327-1329 Full Text: PDF (38 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Electrical Properties of Hydrogenated Amorphous Ge0.90Si0.1:Hx Films
B. A. Nadzhafov
pp. 1330-1333 Full Text: PDF (61 kB)
Photoresponse and Electroluminescence of Silicon–– Structures
L. V. Belyakov, D. N. Goryachev, and O. M. Sreseli
pp. 1334-1337 Full Text: PDF (56 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Laser Waveguide with a Reverse Gradient of the Refractive Index
E. Yu. Kotel'nikov, I. V. Kudryashov, M. G. Rastegaeva, A. A. Katsnel'son, A. S. Shkol'nik, and V. P. Evtikhiev
pp. 1338-1340 Full Text: PDF (52 kB)
The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes
E. Yu. Kotel'nikov, A. A. Katsnel'son, I. V. Kudryashov, M. G. Rastegaeva, W. Richter, V. P. Evtikhiev, I. S. Tarasov, and Zh. I. Alferov
pp. 1341-1342 Full Text: PDF (32 kB)
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3–4 µm: Part I
T. N. Danilova, A. N. Imenkov, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 1343-1350 Full Text: PDF (110 kB)
A Coherent Laser Based on a Two-Well Structure
V. F. Elesin and A. V. Tsukanov
pp. 1351-1354 Full Text: PDF (55 kB)
DOI
Collections
Content Designation
Archived web content