Semiconductors V. 32, I. 09

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MAIK “Nauka/Interperiodica”.
Semiconductors -- September 1998 Volume 32, Issue 9, pp. 917-1028 Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals A. F. Revinskii Full Text: PDF (115 kB) Formation of donor centers upon annealing of dysprosium- and holmium-implanted silicon O. V. Aleksandrov, A. O. Zakhar'in, N. A. Sobolev, E. I. Shek, M. I. Makoviichuk, and E. O. Parshin Full Text: PDF (63 kB) Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride S. V. Ordin, B. N. Sharupin, and M. I. Fedorov Full Text: PDF (177 kB) Physical properties of CuxAg1 – xIn5S8 single crystals and related surface-barrier structures I. V. Bodnar', E. A. Kudritskaya, I. K. Polushina, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (89 kB) Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium A. N. Veis and S. A. Nemov Full Text: PDF (50 kB) Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment V. B. Neimash, V. M. Siratskii, A. N. Kraichinskii, and E. A. Puzenko Full Text: PDF (87 kB) The effect of antisite defects on the band structure and dielectric function of In1 – xGaxSb solid solutions V. G. Deibuk and V. I. Studenets Full Text: PDF (96 kB) Pressure dependence of the dielectric and optical properties of wide-gap semiconductors S. Yu. Davydov and S. K. Tikhonov Full Text: PDF (68 kB) Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, G. B. Galiev, V. A. Strakhov, and N. G. Yaremenko Full Text: PDF (73 kB) Mobility of charge carriers in double-layer PbTe/PbS structures O. A. Aleksandrova, R. Ts. Bondokov, I. V. Saunin, and Yu. M. Tairov Full Text: PDF (108 kB) Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures G. M. Min'kov, A. V. Germanenko, and O. É. Rut Full Text: PDF (82 kB) Current transport in porous p-Si and Pd-porous Si structures S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu Full Text: PDF (77 kB) Determining surface recombination rates in epitaxial layers of n-CdxHg1 – xTe from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers P. A. Borodovskii, A. F. Buldygin, and V. S. Varavin Full Text: PDF (83 kB) Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum G. V. Gadiyak and J. H. Stathis Full Text: PDF (85 kB) The effect of a nonmonotonic potential profile on edge magnetic states E. B. Gorokhov, D. A. Romanov, S. A. Studenikin, V. A. Tkachenko, and O. A. Tkachenko Full Text: PDF (258 kB) Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma I. A. Karpovich, A. V. Anshon, and D. O. Filatov Full Text: PDF (86 kB) Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters S. N. Grinyaev and V. A. Chaldyshev Full Text: PDF (158 kB) Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime D. D. Bykanov, A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev Full Text: PDF (142 kB) Energy spectrum of a nonideal quantum well in an electric field O. L. Lazarenkova and A. N. Pikhtin Full Text: PDF (169 kB) Effect of the quantum-dot surface density in the active region on injection-laser characteristics A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, A. V. Lunev, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (76 kB) Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure Yu. L. Ivánov, S. A. Morozov, V. M. Ustinov, and A. E. Zhukov Full Text: PDF (42 kB) Composition and porosity of multicomponent structures: porous silicon as a three-component system L. V. Belyakov, T. L. Makarova, V. I. Sakharov, I. T. Serenkov, and O. M. Sreseli Full Text: PDF (68 kB) Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities B. I. Reznikov and A. V. Subashiev Full Text: PDF (195 kB) Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors V. V. Vasil'ev and Yu. P. Mashukov Full Text: PDF (77 kB) Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm A. A. Popov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (218 kB) Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova, and A. F. Shulekin Full Text: PDF (52 kB) Vladimir Idelevich Perel' (On His 70th Birthday) Full Text: PDF (87 kB)