Semiconductors V. 39, I. 07
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Authors
Issue Date
2005-07
Type
Language
en_US
Keywords
Semiconductors
Alternative Title
Abstract
Description
Semiconductors -- July 2005
Volume 39, Issue 7, pp. 735-860
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon
A. V. Oleinich-Lysyuk, B. I. Gutsulyak, and I. M. Fodchuk
pp. 735-737 Full Text: PDF (54 kB)
Phonon Scattering, Thermoelectric Power, and Thermal Conductivity Control in a Semiconductor–Metal Eutectic Composition
G. I. Isakov
pp. 738-741 Full Text: PDF (57 kB)
The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 742-747 Full Text: PDF (80 kB)
Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures
S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, and V. M. Ustinov
pp. 748-753 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Low-Temperature Instabilities of the Electrical Properties of Cd0.96Zn0.04Te:Cl Semi-insulating Crystals
A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra, and N. D. Vakhnyak
pp. 754-758 Full Text: PDF (79 kB)
Polarized Infrared and Raman Spectroscopy Studies of the Liquid Crystal E7 Alignment in Composites Based on Grooved Silicon
E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina, V. B. Voronkov, and J. K. Vij
pp. 759-767 Full Text: PDF (294 kB)
Hydrogen-Containing Donors in Silicon: Centers with Negative Effective Correlation Energy
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko
pp. 768-771 Full Text: PDF (59 kB)
Weak Ferromagnetism in InSe:Mn Layered Crystals
V. V. Slyn'ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin, V. E. Slyn'ko, M. Arciszewska, and W. D. Dobrowolski
pp. 772-776 Full Text: PDF (71 kB)
Dispersion of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) and Tl1 – xCuxInS2 (0 <= x <= 0.015) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 777-779 Full Text: PDF (42 kB)
The Effect of Neutron Irradiation on the Properties of n-InSb Whisker Microcrystals
I. A. Bolshakova, V. M. Boiko, V. N. Brudnyi, I. V. Kamenskaya, N. G. Kolin, E. Yu. Makido, T. A. Moskovets, and D. I. Merkurisov
pp. 780-785 Full Text: PDF (86 kB)
The Electrooptic Effect and Anisotropy of the Refractive Index in Tl1 – xCuxGaSe2 (0 <= x <= 0.02) Crystals
A. N. Georgobiani, A. Kh. Matiev, and B. M. Khamkhoev
pp. 786-788 Full Text: PDF (49 kB)
Stimulation of Negative Magnetoresistance by an Electric Field and Light in Silicon Doped with Boron and Manganese
M. K. Bakhadyrkhanov, O. É. Sattarov, Kh. M. Iliev, K. S. Ayupov, and Tuérdi Umaier
pp. 789-791 Full Text: PDF (51 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Specific Features of the Physical Properties of a Modified CdTe Surface
V. P. Makhniy
pp. 792-794 Full Text: PDF (100 kB)
The Effects of Interface States on the Capacitance and Electroluminescence Efficiency of InGaN/GaN Light-Emitting Diodes
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, and Yu. G. Shreter
pp. 795-799 Full Text: PDF (75 kB)
The Properties of Structures Based on Oxidized Porous Silicon under the Effect of Illumination and a Gas Environment
D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, D. V. Terin, and E. I. Khasina
pp. 800-804 Full Text: PDF (74 kB)
LOW-DIMENSIONAL SYSTEMS
Optical Transitions in a Quantized Cylindrical Layer in the Presence of a Homogeneous Electric Field
V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, and G. Sh. Petrosyan
pp. 805-810 Full Text: PDF (73 kB)
Nonohmic Quasi-2D Hopping Conductance and the Kinetics of Its Relaxation
B. A. Aronzon, D. Yu. Kovalev, and V. V. Ryl'kov
pp. 811-819 Full Text: PDF (130 kB)
The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System
Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. A. Tonkikh, N. A. Bert, and V. M. Ustinov
pp. 820-825 Full Text: PDF (131 kB)
Resonance Modulation of Electron–Electron Relaxation by a Quantizing Magnetic Field
V. I. Kadushkin
pp. 826-829 Full Text: PDF (62 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy
V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, V. M. Kashkarov, O. V. Kurilo, S. Yu. Turishchev, A. B. Golodenko, and É. P. Domashevskaya
pp. 830-834 Full Text: PDF (79 kB)
Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder
N. N. Kononov, G. P. Kuz'min, A. N. Orlov, A. A. Surkov, and O. V. Tikhonevich
pp. 835-839 Full Text: PDF (77 kB)
Magnetic Properties of Iron-Modified Amorphous Carbon
S. G. Yastrebov, V. I. Ivanov-Omskii, V. Pop, C. Morosanu, A. Slav, and J. Voiron
pp. 840-844 Full Text: PDF (73 kB)
Photosensitive Properties and a Mechanism for Photogeneration of Charge Carriers in Polymeric Layers Containing Organometallic Complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, and V. V. Kudryavtsev
pp. 845-850 Full Text: PDF (85 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
High-Power Flip–Chip Blue Light-Emitting Diodes Based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil'eva, and G. V. Itkinson
pp. 851-855 Full Text: PDF (96 kB)
A Ferroelectric Field Effect Transistor Based on a Pb(ZrxTi1 – x)O3/SnO2 Heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk, and I. V. Grekhov
pp. 856-860 Full Text: PDF (153 kB)
Citation
Publisher
MAIK “Nauka/Interperiodica”.