Semiconductors V. 37, I. 11

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Semiconductors -- November 2003 Volume 37, Issue 11, pp. 1243-1362 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electronic Structure of Cubic Silicon Carbide with Substitutional 3d Impurities at Si and C Sites N. I. Medvedeva, E. I. Yur'eva, and A. L. Ivanovskii pp. 1243-1246 Full Text: PDF (63 kB) Optical and Thermal Properties of CuAlxIn1 – xTe2 Solid Solutions I. V. Bodnar' pp. 1247-1251 Full Text: PDF (73 kB) Defect-Related Luminescence of GaN:Zn Films Thermally Treated in a Radio-Frequency Ammonia Plasma G. A. Sukach, V. V. Kidalov, A. I. Vlasenko, and E. P. Potapenko pp. 1252-1256 Full Text: PDF (63 kB) Effective Electron Mass in a MnxHg1 – xTe System I. M. Nesmelova pp. 1257-1258 Full Text: PDF (29 kB) Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions V. V. Ushakov and Yu. V. Klevkov pp. 1259-1263 Full Text: PDF (295 kB) Ultraviolet Luminescence of Thin GaN Films Grown by Radical-Beam Gettering Epitaxy on Porous GaAs(111) Substrates V. V. Kidalov, G. A. Sukach, A. S. Revenko, and E. P. Potapenko pp. 1264-1265 Full Text: PDF (30 kB) Hopping Polarization Photoconductivity of Silicon with the Involvement of Impurity Pairs of Groups III and V Ya. E. Pokrovskii and N. A. Khval'kovskii pp. 1266-1274 Full Text: PDF (133 kB) Defect Formation in PbTe under the Action of a Laser Shock Wave V. S. Yakovyna, D. M. Zayachuk, and N. N. Berchenko pp. 1275-1277 Full Text: PDF (42 kB) Galvanomagnetic Effects in Atomic-Disordered HgSe1 – xSx Compounds A. E. Kar'kin, V. V. Shchennikov, S. E. Danilov, V. A. Arbuzov, and B. N. Goshchitskii pp. 1278-1282 Full Text: PDF (74 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Photosensitive Structure on CdGa2S4 Single Crystals V. Yu. Rud', Yu. V. Rud', A. A. Vaipolin, I. V. Bodnar', and N. Fernelius pp. 1283-1290 Full Text: PDF (115 kB) Photoelectric Phenomena in ZnO:Al–p-Si Heterostructures S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 1291-1295 Full Text: PDF (77 kB) The Thermoelectric Power of a Semiconductor p–n Heterojunction M. M. Gadzhialiev and Z. Sh. Pirmagomedov pp. 1296-1298 Full Text: PDF (45 kB) On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction and the Behavior of an Effective Shear Modulus A. V. Oleinich-Lysyuk, N. P. Beshley, and I. M. Fodchuk pp. 1299-1302 Full Text: PDF (55 kB) Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures I. V. Antonova, V. A. Stuchinskii, O. V. Naumova, D. V. Nikolaev, and V. P. Popov pp. 1303-1307 Full Text: PDF (69 kB) Photosensitive Structures Based on In2S3 Crystals I. V. Bodnar', V. A. Polubok, V. Yu. Rud', and Yu. V. Rud' pp. 1308-1310 Full Text: PDF (50 kB) Kinetics of the Initial Stage in Chalcogenide Passivation of III–V Semiconductors V. F. Antyushin, A. V. Budanov, D. S. Kukharenko, and D. A. Palishkin pp. 1311-1314 Full Text: PDF (51 kB) LOW-DIMENSIONAL SYSTEMS Pulsed-Laser Modification of Germanium Nanoclusters in Silicon V. A. Volodin, E. I. Gatskevich, A. V. Dvurechenskii, M. D. Efremov, G. D. Ivlev, A. I. Nikiforov, D. A. Orekhov, and A. I. Yakimov pp. 1315-1320 Full Text: PDF (80 kB) Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, I. A. Badmaeva, S. M. Repinskii, and M. Voelskow pp. 1321-1325 Full Text: PDF (73 kB) Optical Properties of MBE-Grown Ultrathin GaAsN Insertions in GaAs Matrix N. V. Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsul'nikov, H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, and V. M. Ustinov pp. 1326-1330 Full Text: PDF (107 kB) Spontaneous Formation of the Periodic Composition-Modulated Nanostructure in CdxHg1 – xTe Films P. A. Bakhtin, V. S. Varavin, S. A. Dvoretskii, A. F. Kravchenko, A. V. Latyshev, N. N. Mikchailov, I. V. Sabinina, Yu. G. Sidorov, and M. V. Yakushev pp. 1331-1335 Full Text: PDF (132 kB) Excitonic Recombination near the Mobility Edge in CdSe/ZnSe Nanostructures M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuychik, S. V. Ivanov, A. A. Toropov, T. V. Shubina, and P. S. Kop'ev pp. 1336-1341 Full Text: PDF (81 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring D. I. Tetelbaum, A. A. Ezhevskii, and A. N. Mikhaylov pp. 1342-1344 Full Text: PDF (45 kB) PHYSICS OF SEMICONDUCTOR DEVICES Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the Near Infrared (1.3–1.5 µm) Region A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, and S. A. Tiis pp. 1345-1349 Full Text: PDF (185 kB) Thermoelements with Side Heat Exchange A. A. Ashcheulov, V. G. Okhrem, and E. A. Okhrem pp. 1350-1355 Full Text: PDF (74 kB) 1.7–1.8 µm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, E. G. Golikova, Yu. A. Ryaboshtan, and I. S. Tarasov pp. 1356-1362 Full Text: PDF (99 kB)
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