Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Loading...
Thumbnail Image
Authors
Madisetti, Shailesh
Tokranov, Vadim
Greene, Andrew
Yakimov, Michael
Hirayama, Makoto
Oktyabrsky, Serge
Issue Date
2014
Type
Article
Language
en_US
Keywords
heteroepitaxial molecular beams , epitaxy , InGaSb quantum well , migration enhanced epitaxy technique , atomic force microscopy , Auger electron spectroscopy , growth-related defects , threading dislocations , microtwins , antiphase boundaries , surface morphology , defect density
Research Projects
Organizational Units
Journal Issue
Alternative Title
Abstract
A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this paper. The migration enhanced epitaxy (MEE) technique was employed for AlSb nucleation layer (NL) on Si and analyzed using atomic force microscopy and in-situ Auger electron spectroscopy techniques to optimize growth conditions for continuous 2D buffer layers and improve surface quality of subsequent layers. Growth-related defects (threading dislocations, microtwins, and antiphase boundaries) and their effect on surface morphology and electrical properties of the QWs are analyzed with scanning electron microscope and transmission electron microscopy and correlated to the NL properties. The baseline data for defect density in the layers and resultant surface morphology are presented. Room temperature p-channel Hall mobility of 660 cm2 /V s at 3 x 1011 cm-2 sheet hole concentration is achieved in InGaSb QWs using an optimized 15 monolayer AlSb MEE NL at 300 degrees C growth temperature.
Description
Citation
Madisetti, S., Tokranov, V., Greene, A., Yakimov, M., Hirayama, M., Oktyabrsky S., . . . Jacob, A. P. (2014). Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 32(5). doi:10.1116/1.4892797
Publisher
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
1071-1023
EISSN