Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties
Journal Title
Loading...
Issue Date
2014
Authors
Madisetti, Shailesh
Tokranov, Vadim
Greene, Andrew
Yakimov, Michael
Hirayama, Makoto
Oktyabrsky, Serge
Publisher
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Keywords
heteroepitaxial molecular beams , epitaxy , InGaSb quantum well , migration enhanced epitaxy technique , atomic force microscopy , Auger electron spectroscopy , growth-related defects , threading dislocations , microtwins , antiphase boundaries , surface morphology , defect density
Abstract
A study of heteroepitaxial molecular beam epitaxy growth of strained p-channel InGaSb quantum
well (QW) on lattice mismatched Si (100) using Al(Ga)Sb metamorphic buffers is presented in this
paper. The migration enhanced epitaxy (MEE) technique was employed for AlSb nucleation layer
(NL) on Si and analyzed using atomic force microscopy and in-situ Auger electron spectroscopy
techniques to optimize growth conditions for continuous 2D buffer layers and improve surface
quality of subsequent layers. Growth-related defects (threading dislocations, microtwins, and antiphase
boundaries) and their effect on surface morphology and electrical properties of the QWs are
analyzed with scanning electron microscope and transmission electron microscopy and correlated
to the NL properties. The baseline data for defect density in the layers and resultant surface morphology
are presented. Room temperature p-channel Hall mobility of 660 cm2 /V s at 3 x 1011 cm-2
sheet hole concentration is achieved in InGaSb QWs using an optimized 15 monolayer AlSb MEE
NL at 300 degrees C growth temperature.
Description
DOI
Content Designation
Archived web content