Optimization of the Growth of Graphene on Cu Foil Substrates by Chemical Vapor Deposition

Abstract

The most common method for producing large area graphene films is by performing chemical vapor deposition on Cu foil substrates. The reason for using Cu as a substrate is that it has a very low solubility for C at the temperature that the chemical vapor deposition is performed, which ensures a self-limited growth of a single monolayer of graphene. The goal of this research project is to determine the optimal procedure for producing graphene films with a low defect density on Cu foil substrates.