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dc.contributor.authorLi, Nanxi
dc.contributor.authorMagden, Emir Salih
dc.contributor.authorSu, Zhan
dc.contributor.authorSingh, Neetesh
dc.contributor.authorRuocco, Alfonso
dc.contributor.authorXin, Ming
dc.contributor.authorByrd, Matthew
dc.contributor.authorCallahan, Patrick T.
dc.contributor.authorBradley, Jonathan D.
dc.contributor.authorBaiocco, Christopher
dc.contributor.authorVermeulen, Diedrik
dc.contributor.authorWatts, Michael R.
dc.creator
dc.date.accessioned2018-05-08T13:44:32Z
dc.date.available2018-05-08T13:44:32Z
dc.date.issued2018
dc.identifier.citationLi, N. X., Magden, E. S., Su, Z., Singh, N., Ruocco, A., Xin, M., . . . Watts, M. R. (2018). Broadband 2- μm emission on silicon chips: Monolithically integrated Holmium lasers. Optics Express, 26(3), 2220-2230. doi:10.1364/oe.26.002220en_US
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/1951/70180
dc.description.abstractLaser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al2O3:Ho3+ glass is used as gain medium, which provides broadband emission around 2 μm. By varying the distributed feedback grating period and Al2O3:Ho3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 μm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 μm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.en_US
dc.description.sponsorshipResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA John A. Paulson School of Engineering and Applied Science, Harvard University, Cambridge, MA, USA College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York, USA Defense Advanced Research Projects Agency (DARPA) E-PHI project (grant no. HR0011-12-2-0007) Defense Advanced Research Projects Agency (DARPA) DODOS project (grant no. HR0011-15-C-0056).en_US
dc.language.isoen_USen_US
dc.publisherOptical Society of Americaen_US
dc.subjectintegrated opticsen_US
dc.subjectintegrated optics devicesen_US
dc.subjectlasersen_US
dc.subjectguided wavesen_US
dc.subjectholmium-doped distributed feedback laseren_US
dc.titleBroadband 2-μm emission on silicon chips: Monolithically integrated Holmium lasersen_US
dc.title.alternativeOptics Expressen_US
dc.typeArticleen_US


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