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    Broadband 2-μm emission on silicon chips: Monolithically integrated Holmium lasers

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    Broadband 2-µm emission on silicon chips_Final.pdf (3.978Mb)
    Date
    2018
    Author
    Li, Nanxi
    Magden, Emir Salih
    Su, Zhan
    Singh, Neetesh
    Ruocco, Alfonso
    Xin, Ming
    Byrd, Matthew
    Callahan, Patrick T.
    Bradley, Jonathan D.
    Baiocco, Christopher
    Vermeulen, Diedrik
    Watts, Michael R.
    Publisher
    Optical Society of America
    Metadata
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    Subject
    integrated optics
    integrated optics devices
    lasers
    guided waves
    holmium-doped distributed feedback laser
    Abstract
    Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al2O3:Ho3+ glass is used as gain medium, which provides broadband emission around 2 μm. By varying the distributed feedback grating period and Al2O3:Ho3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 μm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 μm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.
    URI
    http://hdl.handle.net/1951/70180
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    • SUNY Polytechnic Institute Faculty and Staff Research, Publications, and Creative Works [63]

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