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dc.contributor.authorSingh, Neetesh
dc.contributor.authorXin, Ming
dc.contributor.authorVermeulen, Diedrik
dc.contributor.authorShtyrkova, Katia
dc.contributor.authorLi, Nanxi
dc.contributor.authorCallahan, Patrick T.
dc.contributor.authorMagden, Emir Salih
dc.contributor.authorRuocco, Alfonso
dc.contributor.authorFahrenkopf, Nicholas
dc.contributor.authorBaiocco, Christopher
dc.contributor.authorKuo, Bill P-P
dc.contributor.authorRadic, Stojan
dc.contributor.authorIppen, Erich
dc.contributor.authorKärtner, Franz X.
dc.contributor.authorWatts, Michael R.
dc.creator
dc.date.accessioned2018-03-21T14:14:59Z
dc.date.available2018-03-21T14:14:59Z
dc.date.issued2018
dc.identifier.citationSingh, N., Xin, M., Vermeulen, D., Shtyrkova, K., Li, N. X., Callahan, P. T., . . . Watts, M. R. (2018). Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 μm to beyond 2.4 μm. Light-Science & Applications, 7, 8. doi:10.1038/lsa.2017.131en_US
dc.identifier.issn2047-7538
dc.identifier.urihttp://hdl.handle.net/1951/69658
dc.description.abstractEfficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy, the generated signal spans the wavelength range from the edge of the silicon transmission window, approximately 1.06 to beyond 2.4 μm, with a − 20 dB bandwidth covering 1.124–2.4 μm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (−35 dB bandwidth). We also measured the coherence over an octave, obtaining gð1Þ 12 l ð Þ >90%, in good agreement with the simulations. In addition, we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications. This research paves the way for applications, such as chip-scale precision spectroscopy, optical coherence tomography, optical frequency metrology, frequency synthesis and wide-band wavelength division multiplexing in the telecom window.en_US
dc.description.sponsorshipResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA John A. Paulson School of Engineering and Applied Science, Harvard University, Cambridge, MA, USA College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY, USA Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, USA Centre for Free Electron Laser Science (CFEL)-DESY and University of Hamburg, Germany Defense Advanced Research Projects Agency (DARPA) under the Direct on-chip digital optical synthesizer (DODOS) project, contract number HR0011-15-C-0056 NSS fellowship from Agency of Science, Technology, and Research (A*STAR), Singaporeen_US
dc.publisherChangchun Institute of Optics, Fine Mechanics and Physicsen_US
dc.subjectcoherenceen_US
dc.subjectintegrated photonicsen_US
dc.subjectsiliconen_US
dc.subjectsupercontinuumen_US
dc.subjectinsulationen_US
dc.subjectsemiconductoren_US
dc.titleOctave-spanning coherent supercontinuum generation in silicon on insulator from 1.06μm to beyond 2.4μmen_US
dc.title.alternativeLight: Science & Applicationsen_US
dc.typeArticleen_US


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