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    Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)

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    Optical properties of pseudomorphic Ge1-xSnx (x = 0 to 0.11) alloys on Ge(001)_Final.pdf (4.015Mb)
    Date
    2014
    Author
    Medikonda, Manasa
    Muthinti, Gangadhara R.
    Vasić, Relja
    Adam, Thomas N.
    Reznicek, Alexander
    Wormington, Matthew
    Malladi, Girish
    Kim, Yihwan
    Huang, Yi-Chiau
    Diebold, Alain C.
    Publisher
    Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
    Metadata
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    Subject
    germanium (Ge)
    electronics
    optoelectronics
    process based strain engineering
    alloying
    hole mobility
    optical measurement
    Abstract
    The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x=0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering (RBS) and RBS ion channeling methods were used to confirm the Sn composition and substitutional nature of the Sn into the Ge lattice. The pseudomorphic nature of the Ge1-xSnx on Ge is confirmed using high resolution x-ray diffraction (HRXRD) and transmission electron microscopy. Although HRXRD reciprocal space maps indicated that the Ge1-xSnx was pseudomorphic to Ge, the shape of the Bragg peaks indicated that the sample surface was rough. The rough surface morphology is confirmed using atomic force microscopy. The complex dielectric function is reported in the IR, visible, and UV spectrum in the wavelength range of 0.2–5.06 eV. The E1, E1þD1, E2, and E0 critical points are extracted using second and third derivative line shape fitting and are compared with the elastic theory calculations of strained Ge1-xSnx (x=0 to 0.11) alloys and fully relaxed Ge1-xSnx (x=0 to 0.11) alloys. The E0 critical point energies are observed to have slightly larger values than those calculated for completely relaxed Ge1-xSnx alloys due to the presence of compressive strain.
    URI
    http://hdl.handle.net/1951/69197
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    • SUNY Polytechnic Institute Faculty and Staff Research, Publications, and Creative Works [63]

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