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dc.contributor.authorNarasimham, Avyaya J.
dc.contributor.authorGreen, Avery
dc.contributor.authorMatyi, Richard J.
dc.contributor.authorKhare, Prasanna
dc.contributor.authorVo, Tuan
dc.contributor.authorDiebold, Alain
dc.contributor.authorLaBella, Vincent P.
dc.creator
dc.date.accessioned2017-05-10T13:04:12Z
dc.date.available2017-05-10T13:04:12Z
dc.date.issued2015
dc.identifier.citationNarasimham, A. J., Green, A., Matyi, R. J., Khare, P., Vo, T. Diebold, A., & LaBella, V. P. (2015). Pulsed-N2 assisted growth of 5-20 nm thick β−W films. AIP Advances, 5, 117107. doi:10.1063/1.4935372en_US
dc.identifier.issn2158-3226
dc.identifier.urihttp://hdl.handle.net/1951/69178
dc.description.abstractA technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.en_US
dc.description.sponsorshipCollege of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203, USA College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203, USAen_US
dc.language.isoen_USen_US
dc.publisherAIP Advancesen_US
dc.subjectthin film growthen_US
dc.subjectcrystal growthen_US
dc.subjectlattice constantsen_US
dc.subjectLeBail methoden_US
dc.titlePulsed-N2 assisted growth of 5-20 nm thick β−W filmsen_US
dc.title.alternativeAIP Advancesen_US
dc.typeArticleen_US


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