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dc.contributor.authorGreen, Avery J.
dc.contributor.authorDey, Sonal
dc.contributor.authorAn, Yong Q.
dc.contributor.authorO'Brien, Brendan
dc.contributor.authorO'Mullane, Samuel
dc.contributor.authorThiel, Bradley
dc.contributor.authorDiebold, Alain C.
dc.creator
dc.date.accessioned2017-04-12T13:50:53Z
dc.date.available2017-04-12T13:50:53Z
dc.date.issued2016
dc.identifier.citationGreen, A. J., Dey, S., An, Y. Q., O’Brien, B., O’Mullane, S., Thiel, B., & Diebold, A. C. (2016). Surface oxidation of the topological insulator Bi2Se3. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 34, 061403. doi:10.1116/1.4964637en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/1951/69069
dc.description.abstractAn understanding of the aging and oxidation of the (0001) surface of Bi2Se3 is critical to a comprehensive physical picture of its topologically protected surface states. Here, the authors contribute new experimental observations about the aging and oxidation process. The authors find that surface aging in ambient conditions occurs in two major steps. Within 2 h of exfoliation, a series of ~3.2A ° high islands are observed by atomic force microscopy over approximately 10% of the surface. Subsequently, patch growth stops, and oxidation begins after the 2 h and continues until one quintuple layer has been oxidized. X-ray photoelectron spectroscopy shows no sign of oxidation before ~120 min of exposure to air, and the oxygen 1 s peak, as well as oxidized Se 3d and Bi 4d peaks, are clearly present after ~190 min of ambient exposure. Variable angle spectroscopic ellipsometry indicates that the oxidation of a full quintuple layer occurs on the time scale of days. These results are in good agreement with the time dependent changes observed in the surface crystal structure by second harmonic generation. In addition to providing the ability to nondestructively measure oxide on the surface of Bi2Se3 crystals, ellipsometry can be used to identify the thickness of Bi2Se3 flakes. With these methods, the authors have constructed a consistent, experimentally based model of aging process at the surface of Bi2Se3.en_US
dc.description.sponsorshipColleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, New York 12203en_US
dc.language.isoen_USen_US
dc.publisherJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Filmsen_US
dc.subjectagingen_US
dc.subjectoxidationen_US
dc.subjectBi2Se3en_US
dc.subjectsurface stateen_US
dc.subjectexfoliationen_US
dc.subjectatomic force microscopyen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.subjectambient exposureen_US
dc.subjectvariable angle spectroscopic ellipsometryen_US
dc.subjectsecond harmonic generationen_US
dc.subjectellipsometryen_US
dc.subjectmodelingen_US
dc.titleSurface oxidation of the topological insulator Bi2Se3en_US
dc.title.alternativeJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Filmsen_US
dc.typeArticleen_US


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