Variability and reliability analysis in self-assembled multichannel carbon nanotube field-effect transistors
Tulevski, George S.
Hannon, James B.
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Subjectcarbon nanotubes; channel material; scaled transistor; high-speed logic application; low-power logic application; drive current; logic device; field-effect transistor; self-assembly; compact statistical model; Monte Carlo simulation
Carbon nanotubes (CNTs) have been widely studied as a channel material of scaled transistors for high-speed and low-power logic applications. In order to have sufficient drive current, it is widely assumed that CNT-based logic devices will have multiple CNTs in each channel. Understanding the effects of the number of CNTs on device performance can aid in the design of CNT field-effect transistors (CNTFETs). We have fabricated multi-CNT-channel CNTFETs with an 80-nm channel length using precise self-assembly methods. We describe compact statistical models and Monte Carlo simulations to analyze failure probability and the variability of the on-state current and threshold voltage. The results show that multichannel CNTFETs are more resilient to process variation and random environmental fluctuations than single-CNT devices.