Process development for high resolution hydrogen silsesquioxane patterning using a commercial scanner for extreme ultraviolet lithography
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SubjectEUV patterning; high resolution EUV photoresists; EUV-interference lithography; extreme ultraviolet lithography; nanopatterning; electron resists; nanolithography; hydrogen silsesquioxane (HSQ) patterning; ASML NXE 3300B scanner; electron beams; image scanners
The semiconductor industry is transitioning toward the use of extreme ultraviolet (EUV) lithography as a next generation patterning technology. There are currently only a limited number of high resolution EUV photoresists reported with EUV patterning capabilities, and those are generally tested using EUV-interference lithography. One such resist is the more commonly known electron beam resist, hydrogen silsesquioxane (HSQ), which is also sensitive to EUV exposure. In the present work, high resolution, dense, subdense patterning of HSQ resist on 300mm wafers was demonstrated using ASML’s NXE 3300B scanner. The critical dimensions analyzed ranged from 18 to 10 nm. Resolution down to 10.0 on 21.0 nm spacing was achieved with 6.5 nm line width roughness. This demonstration of high resolution EUV patterning of HSQ on a commercial scanner makes this process potentially viable for high volume manufacturing.