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dc.contributor.authorTatem, Elroy A.
dc.contributor.authorKaloyeros, Alain E.
dc.contributor.authorEisenbraun, Eric T.
dc.creator
dc.date.accessioned2017-02-24T15:51:54Z
dc.date.available2017-02-24T15:51:54Z
dc.date.issued2014
dc.identifier.citationTatem, E. A., Kaloyeros, A. E., & Eisenbraun, E. T. (2014). Thermal coefficient of resistivity of ultrathin Ag films deposited on Cu for applications in emerging interconnect systems. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 32(3). doi:10.1116/1.4868718en_US
dc.identifier.issn2166-2746
dc.identifier.urihttp://hdl.handle.net/1951/68930
dc.description.abstractAs the semiconductor industry continues to scale feature sizes, scattering from phonons, surfaces, and grain boundaries results in a significant increase in metal interconnect resistivity. In this work, a thin Ag capping layer is used to modify electron–phonon scattering in 20 nm Cu films to reduce the total resistivity of the bilayer system. To investigate the effect of Ag layer thickness on the electrical properties of the underlying Cu film, the thermal coefficient of resistivity (TCR) is calculated for Cu films that are capped with ultrathin Ag layers of various thicknesses. The TCR exhibited a dependence on the thickness of the ultrathin Ag films deposited on Cu. The slope of the resistance versus temperature is lower for Ag-capped Cu films when compared to bare Cu films. A reduced thermal coefficient of resistivity combined with a lower room temperature resistivity for Ag/Cu films is consistent with a decreased contribution of the temperature dependent portion of the resistivity to the total resistivity, which may prove critical for the viability of future metal-based interconnect architectures.en_US
dc.description.sponsorshipCollege of Nanoscale Science and Engineering, State University of New York, 257 Fuller Rd., Albany, New York 12203en_US
dc.language.isoen_USen_US
dc.publisherJournal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomenaen_US
dc.subjectresistivityen_US
dc.subjectsemiconductor industryen_US
dc.subjectphononsen_US
dc.subjectgrain boundariesen_US
dc.subjectcapping layeren_US
dc.subjectelectron–phonon scatteringen_US
dc.subjectresistivityen_US
dc.subjectbilayer systemen_US
dc.subjectCu filmen_US
dc.subjectthermal coefficient of resistivityen_US
dc.subjectmetal-based interconnect architectureen_US
dc.titleThermal coefficient of resistivity of ultrathin Ag films deposited on Cu for applications in emerging interconnect systemsen_US
dc.title.alternativeJournal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomenaen_US
dc.typeArticleen_US


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